Transmission electron microscopy study of a defected zone in GaN on a SiC substrate grown by hydride vapor phase epitaxy
2004 ◽
Vol 260
(3-4)
◽
pp. 360-365
◽
1996 ◽
Vol 158
(1-2)
◽
pp. 28-36
◽
1997 ◽
Vol 148-149
◽
pp. 122-128
◽
2012 ◽
Vol 30
(6)
◽
pp. 061510
◽
2002 ◽
Vol 82
(4)
◽
pp. 735-749
◽
1996 ◽
Vol 74
(2)
◽
pp. 57-66
◽