Transmission electron microscopy study of a defected zone in GaN on a SiC substrate grown by hydride vapor phase epitaxy

2003 ◽  
Vol 94 (3) ◽  
pp. 1676-1685 ◽  
Author(s):  
Leonid A. Bendersky ◽  
Denis V. Tsvetkov ◽  
Yuriy V. Melnik
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