Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy

2003 ◽  
Vol 94 (2) ◽  
pp. 973-978 ◽  
Author(s):  
Lijun Wang ◽  
N. C. Giles
Keyword(s):  
Zinc Oxide ◽  
Temperature Dependence ◽  
Transition Energy ◽  
Free Exciton ◽  
Photoluminescence Excitation ◽  
Exciton Transition

Exciton transition energy and temperature dependence of ultrafast relaxation of self-trapped excitons in polydiacetylenes

1993 ◽  
Vol 207 (4-6) ◽  
pp. 461-467 ◽  
Author(s):  
Masayuki Yoshizawa ◽  
Katsuhiko Nishiyama ◽  
Masamichi Fujihira ◽  
Takayoshi Kobayashi
Keyword(s):  
Temperature Dependence ◽  
Transition Energy ◽  
Exciton Transition ◽  
Ultrafast Relaxation

QUANTUM CONFINEMENT EFFECT IN HgTe NANOCRYSTALS AND VISIBLE LUMINESCENCE

2004 ◽  
Vol 03 (03) ◽  
pp. 393-401 ◽  
Author(s):  
S. RATH ◽  
A. K. DASH ◽  
S. N. SAHU ◽  
S. NOZAKI
Keyword(s):  
Valence Band ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Free Exciton ◽  
Confinement Effect ◽  
Electrochemical Technique ◽  
Cubic Phase ◽  
Exciton Transition ◽  
Mercury Telluride ◽  
Transmission Electron

Mercury Telluride ( HgTe ) nanocrystals with a mean size of 5.35 nm have been synthesized by an electrochemical technique. Structural analysis by transmission electron microscopy and glancing angle X-ray diffraction studies indicate the presence of cubic phase HgTe nanocrystals in the deposit. Optical absorption measurements reveal two well resolved excitonic peaks around 578.5 nm and 550 nm attributed to heavy hole valence band (HVB)–conduction band (CB) and light hole valence band (LVB)–CB transitions, respectively, and suggest a band opening of bulk inverted narrow band gap HgTe as a result of strong quantum confinement effect (QCE). Visible photoluminescence (PL) of HgTe nanocrystals indicates free exciton transition around 579.5 nm as observed from the PL measurement at 300 K along with a bound exciton dominated band around 588 nm. Micro-Raman measurements at 300 K indicate the 1LO vibrational mode at 142.6 cm-1 shifted by 6 cm-1 from its standard bulk value and confirm the QCE.

Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

2008 ◽  
Vol 145 (5-6) ◽  
pp. 321-326 ◽  
Author(s):  
Peter Klason ◽  
Thomas Moe Børseth ◽  
Qing X. Zhao ◽  
Bengt G. Svensson ◽  
Andrej Yu. Kuznetsov ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxygen Vacancy ◽  
Temperature Dependence ◽  
Decay Times

Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors

2016 ◽  
Vol 617 ◽  
pp. 114-119
Author(s):  
Abhishek Singh Dahiya ◽  
Charles Opoku ◽  
Frederic Cayrel ◽  
Damien Valente ◽  
Guylaine Poulin-Vittrant ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Charge Transport ◽  
Temperature Dependence

Resonant Photoluminescence Excitation in GaAs Grown Directly on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
S. Zemon ◽  
C. Jagannath ◽  
S. K. Shastry ◽  
W. J. Miniscalco ◽  
G. Lambert
Keyword(s):  
Ground State ◽  
Heavy Hole ◽  
Laser Excitation ◽  
Free Exciton ◽  
Light Hole ◽  
The Other ◽  
Organometallic Vapor Phase Epitaxy ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Excitation Line

AbstractWe describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light hole photoluminescence (PL) region, one identified with a free exciton process and the other with donor-related transitions. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=l ground state to an n=2 excited state. The PL excitation spectra associated with these features have spectral widths as narrow as 1.5 meV. PL spectral widths of ~3 meV have been attained for the heavy hole exciton band, representing the narrowest value obtained for OMVPE material and an improvement of about 30% over our best previous results.

Manifestation of the Spin in the Isotope Effects

2015 ◽  
Vol 1084 ◽  
pp. 147-151
Author(s):  
Vladimir G. Plekhanov ◽  
Vyacheslav F. Myshkin ◽  
Valery A. Khan ◽  
Dmitry A. Izhoykin
Keyword(s):  
Magnetic Field ◽  
Transition Energy ◽  
Isotope Effects ◽  
Shallow Donor ◽  
Photoluminescence Excitation ◽  
Isotope Substitution ◽  
Fundamental Properties ◽  
Atomic Nuclei ◽  
Modern Physics ◽  
Band Transition

Modern physics distinguishes three fundamental properties of atomic nuclei: mass; spin and related magnetic moment; volume (surrounding field strength), which are the source of isotope effects. The experiments showed that the isotope substitution of the light isotope with the hard one increased the band-to-band transition energy Eg, as well as the exciton binding energy Ebboth in semiconductors and insulators. The representative manifestation of the spin has been observed in photoluminescence excitation spectroscopy in highly enriched28Si crystals with shallow donor P, as well as in the separation of13C and12С isotope in magnetic field.

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