Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers
2003 ◽
Vol 82
(24)
◽
pp. 4331-4333
◽
R. Mahapatra
◽
S. Maikap
◽
Je-Hun Lee
◽
G. S. Kar
◽
A. Dhar
◽
...