scholarly journals Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

2003 ◽  
Vol 94 (2) ◽  
pp. 1043-1049 ◽  
Author(s):  
K. M. Yu ◽  
W. Walukiewicz ◽  
M. A. Scarpulla ◽  
O. D. Dubon ◽  
J. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Laser Melting

Influence of Rapid Thermal Annealing on The Structural and Optical Properties of Pulsed Laser Deposited SnS Thin Films

2015 ◽  
Vol 36 (7) ◽  
pp. 811-820
Author(s):  
刘 磊 LIU Lei ◽  
马明杰 MA Ming-jie ◽  
刘丹丹 LIU Dan-dan ◽  
郭慧尔 GUO Hui-er ◽  
史成武 SHI Cheng-wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Structural And Optical Properties ◽  
Sns Thin Films

scholarly journals Formation of the IR photodetecting structures based on silicon hyperdoped with tellurium

2019 ◽  
Vol 63 (4) ◽  
pp. 430-436
Author(s):  
Fadei F. Komarov ◽  
Nikita S. Nechaev ◽  
Irina N. Parkhomenko ◽  
Gennadii D. Ivlev ◽  
Liudmila A. Vlasukova ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Absorption Coefficient ◽  
Absorption Spectra ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Photon Absorption ◽  
Laser Melting ◽  
Furnace Annealing ◽  
Impurity Atoms

The Si layers doped with Te up to the concentrations of (3–5)1020 cm–3 have been formed via ion implantation and pulsed laser melting. It is found, 70–90 % of the embedded impurity atoms are in substitution states in the silicon lattice. These layers have revealed significant absorption (35–66 %) in the wavelength λ range of 1100–2500 nm. In this case, the absorption coefficient increases with the λ growth. The absorption spectra of the implanted layers after pulsed laser melting, equilibrium furnace annealing, and rapid thermal annealing have been compared. It is shown that equilibrium furnace annealing increases the photon absorption by 4 % in the wavelength range of 1100–2500 nm in comparison with virgin Si. After rapid thermal annealing, the photon absorption in the IR-range increases only by 2 %.

Effect of rapid thermal annealing on texture and properties of pulsed laser deposited zinc oxide thin films

2013 ◽  
Vol 98 ◽  
pp. 149-152 ◽  
Author(s):  
K.C. Sekhar ◽  
S. Levichev ◽  
Koppole Kamakshi ◽  
S. Doyle ◽  
A. Chahboun ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Oxide Thin Films

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

Rapid Thermal Transformation of A-15 Crystal Structure Metallic Thin Films

1995 ◽  
Vol 387 ◽  
Author(s):  
M. J. O'Keefe ◽  
C. L. Cerny
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Physical Vapor Deposition ◽  
Thermal Transformation ◽  
The Body ◽  
Cubic Phase ◽  
Body Centered Cubic ◽  
Body Center Cubic

AbstractPhysical vapor deposition of Group VI elements (Cr, Mo, W) can lead to the formation of a metastable A-15 crystal structure under certain processing conditions. Typically, a thermally induced transformation of the metastable A-15 structure into the equilibrium body centered cubic structure has been accomplished by conventional furnace annealing at T/Tm ≈ 0.3 from tens of minutes to several hours. In this study we report on the use of rapid thermal annealing to transform sputter deposited A- 15 crystal structure tungsten and chromium thin films into body centered cubic films within the same temperature range but at times on the order of one minute. The minimum annealing times and temperatures required for complete transformation of the A-15 phase into the BCC phase varied from sample to sample, indicating that the transformation was dependent on the film characteristics. The electrical resistivity of A-15 Cr and W films was measured before and after rapid thermal annealing and was found to significantly decrease after transformation into the body center cubic phase.

STRUCTURAL CHARACTERISTICS OF (Ba,Sr)TiO3 THIN FILMS BY RAPID THERMAL ANNEALING

2007 ◽  
Vol 14 (01) ◽  
pp. 141-145
Author(s):  
Q. Y. ZHANG ◽  
S. W. JIANG ◽  
Y. R. LI
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Heating Rate ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rapid Heating ◽  
Structural Characteristics ◽  
High Heating Rate ◽  
Duration Time ◽  
Temperature Heating

The rapid thermal annealing (RTA) process was adapted to crystallize the amorphous ( Ba,Sr ) TiO 3 thin films prepared on Si (111) substrates by RF magnetic sputtering deposition. The effect of annealing temperature, heating rate and duration time on crystallization was studied through X-ray diffraction and atomic force microscopy. The result shows that the crystallinity and grain size were strongly dependent on the temperature, heating rate, and duration time. Higher heating rate leads to smaller grain size. In high heating rate, the grain size shows different dependence of temperature from that of low heating rate. For a heating rate of 50°C/s, the grain size decreased with temperature increasing below 700°C, while after that temperature, the grain size increased slightly with the temperature increasing. At a certain temperature, the crystallinity and surface roughness improved with increase in annealing time, while grain size changed little. The effect of rapid heating rate on the nucleation and grain growth has been discussed, which contributes to the limited grain size of the annealed ( Ba,Sr ) TiO 3 thin films.

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