Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Shreepad Karmalkar; D. Mahaveer Sathaiya; M. S. Shur

doi:10.1063/1.1579852

Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1579852 ◽

2003 ◽

Vol 82 (22) ◽

pp. 3976-3978 ◽

Cited By ~ 94

Author(s):

Shreepad Karmalkar ◽

D. Mahaveer Sathaiya ◽

M. S. Shur

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Single-Event Damage-Induced Gate-Leakage Mechanisms in AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3075667 ◽

2021 ◽

pp. 1-6

Author(s):

Shaozhong Yue ◽

Zhangang Zhang ◽

Ziwen Chen ◽

Xuefeng Zheng ◽

Lei Wang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Single Event ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Cited By ~ 21

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2018.2601 ◽

2018 ◽

Vol 10 (2) ◽

pp. 185-189 ◽

Cited By ~ 1

Author(s):

Meilan Hao ◽

Quan Wang ◽

Lijuan Jiang ◽

Chun Feng ◽

Changxi Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2018.2847664 ◽

2018 ◽

Vol 18 (3) ◽

pp. 359-363 ◽

Cited By ~ 1

Author(s):

Lixiang Chen ◽

Xiaohua Ma ◽

Jiejie Zhu ◽

Bin Hou ◽

Qing Zhu ◽

...

Keyword(s):

Electron Beam ◽

Direct Observation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Induced Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electron Beam Induced Current

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Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.3340826 ◽

2010 ◽

Vol 107 (6) ◽

pp. 064501 ◽

Cited By ~ 14

Author(s):

S. Sudharsanan ◽

Shreepad Karmalkar

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4871802 ◽

2014 ◽

Vol 104 (15) ◽

pp. 153510 ◽

Cited By ~ 23

Author(s):

Jie-Jie Zhu ◽

Xiao-Hua Ma ◽

Bin Hou ◽

Wei-Wei Chen ◽

Yue Hao

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Leakage Mechanism

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Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

physica status solidi (a) ◽

10.1002/pssa.202000666 ◽

2021 ◽

pp. 2000666

Author(s):

Chi Sun ◽

Xiaoyu Ding ◽

Xing Wei ◽

Wenxin Tang ◽

Xiaodong Zhang ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Surface Etching ◽

Electron Mobility Transistors ◽

Etching Method

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Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4773244 ◽

2012 ◽

Vol 101 (25) ◽

pp. 253519 ◽

Cited By ~ 42

Author(s):

Satyaki Ganguly ◽

Aniruddha Konar ◽

Zongyang Hu ◽

Huili Xing ◽

Debdeep Jena

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Polarization Effects ◽

Electron Mobility Transistors

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On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate

Applied Physics Letters ◽

10.1063/1.4798257 ◽

2013 ◽

Vol 102 (11) ◽

pp. 113510 ◽

Cited By ~ 27

Author(s):

Ling Xia ◽

Allen Hanson ◽

Timothy Boles ◽

Donghyun Jin

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Silicon Substrate ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors

ETRI Journal ◽

10.4218/etrij.2021-0070 ◽

2022 ◽

Author(s):

Ling‐Feng Mao

Keyword(s):

Temperature Dependence ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Positive Temperature ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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