Two-dimensional self-consistent microwave argon plasma simulations with experimental verification

2003 ◽  
Vol 94 (1) ◽  
pp. 85-95 ◽  
Author(s):  
Y. Li ◽  
M. H. Gordon ◽  
L. A. Roe ◽  
K. Hassouni ◽  
T. Grotjohn
1995 ◽  
Vol 02 (06) ◽  
pp. 723-729 ◽  
Author(s):  
V. YU. ARISTOV ◽  
G. LE LAY ◽  
M. GREHK ◽  
V.M. ZHILIN ◽  
A. TALEB-IBRAHIMI ◽  
...  

We present the first clear evidence of electron emission arising directly from a quantized two-dimensional electron channel from the InAs (110) surface covered by a few Cs atoms (≈ 0.01 Cs ML). Spectral features observed by photoemission spectroscopy using synchrotron radiation reveal discrete-energy electronic states resulting from quantization in the direction normal to the surface. The electron photoemission originates from the vicinities of [Formula: see text] points in the first and second surface Brillouin zones corresponding to the bottom of the conduction band. These findings are in agreement with self-consistent theoretical energy-level calculations using a jellium-like model.


1972 ◽  
Vol 94 (3) ◽  
pp. 226-232
Author(s):  
D. O. Rockwell

A theory is developed to describe the inviscid core in two-dimensional unstalled diffusers with suction (extraction) on the diverging walls. Experimental wall static pressure distributions and streamline patterns agree well with those predicted theoretically. Under appropriate extraction conditions, a stagnation region is located downstream of the diverging wall extraction station. Experimental verification of the streamline patterns and of the location of this stagnation region was achieved via hydrogen bubble visualization. In addition, the possible stall conditions, which result if improper extraction is employed, are described qualitatively.


2021 ◽  
Vol 237 ◽  
pp. 02023
Author(s):  
Bo Wang

Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the modeling method using planar gate structure will inevitably have great deviation. Based on the characteristics of trench gate structure and model analysis coordinate system, the base region is divided into PNP and PIN by considering the two-dimensional effect of carriers. According to whether the trench of PIN part can be covered by depletion layer of PNP part, the specific base region current is analyzed. Finally, simulation and experimental verification are carried out.


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