Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

2003 ◽  
Vol 82 (25) ◽  
pp. 4581-4583 ◽  
Author(s):  
S. Kobayashi ◽  
T. Takenobu ◽  
S. Mori ◽  
A. Fujiwara ◽  
Y. Iwasa
2015 ◽  
Vol 36 (8) ◽  
pp. 793-795 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Sol Kyu Lee ◽  
Hee Jae Chae ◽  
...  

2005 ◽  
Vol 483-485 ◽  
pp. 841-844 ◽  
Author(s):  
Einar Ö. Sveinbjörnsson ◽  
H.Ö. Ólafsson ◽  
G. Gudjónsson ◽  
Fredrik Allerstam ◽  
Per Åke Nilsson ◽  
...  

We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.


2014 ◽  
Vol 35 (8) ◽  
pp. 853-855 ◽  
Author(s):  
Ji Hun Song ◽  
Kwang Suk Kim ◽  
Yeon Gon Mo ◽  
Rino Choi ◽  
Jae Kyeong Jeong

2009 ◽  
Vol 94 (18) ◽  
pp. 183301 ◽  
Author(s):  
Yunseok Jang ◽  
Wi Hyoung Lee ◽  
Yeong Don Park ◽  
Donghoon Kwak ◽  
Jeong Ho Cho ◽  
...  

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