Light intensity imaging of single InAs quantum dots using scanning tunneling microscope

2003 ◽  
Vol 82 (19) ◽  
pp. 3257-3259 ◽  
Author(s):  
T. Tsuruoka ◽  
Y. Ohizumi ◽  
S. Ushioda
2004 ◽  
Vol 85 (12) ◽  
pp. 2355-2357 ◽  
Author(s):  
H. Z. Song ◽  
M. Kawabe ◽  
Y. Okada ◽  
R. Yoshizaki ◽  
T. Usuki ◽  
...  

2010 ◽  
Vol 81 (11) ◽  
Author(s):  
M. R. Hummon ◽  
A. J. Stollenwerk ◽  
V. Narayanamurti ◽  
P. O. Anikeeva ◽  
M. J. Panzer ◽  
...  

1996 ◽  
Vol 20 (4) ◽  
pp. 623-626 ◽  
Author(s):  
M. Hauser ◽  
J. Smoliner ◽  
C. Eder ◽  
G. Ploner ◽  
G. Strasser ◽  
...  

2006 ◽  
Vol 600 (17) ◽  
pp. 3456-3460 ◽  
Author(s):  
Yoshiaki Nakamura ◽  
Hiroyuki Takata ◽  
Akiko Masada ◽  
Masakazu Ichikawa

1996 ◽  
Vol 10 (24) ◽  
pp. 1189-1195 ◽  
Author(s):  
A.S. FERLAUTO ◽  
A.A. QUIVY

We used a new method for studying GaAs surfaces in air with a home-made scanning tunneling microscope. The oxide layer was chemically removed, and the sample was prevented from re-oxidation by a thin layer of mineral oil (NOJOL). MBE-grown GaAs layers and In As quantum dots were successfully imaged.


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