Observation of magnetic-field-enhanced source current of accumulated p-channel metal-oxide-semiconductor field-effect transistors

2003 ◽  
Vol 82 (20) ◽  
pp. 3547-3549 ◽  
Author(s):  
F. A. Baron ◽  
Y. Zhang ◽  
K. L. Wang
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Source Current

scholarly journals Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire

2004 ◽  
Vol 829 ◽  
Author(s):  
Young-Woo Heo ◽  
B. S. Kang ◽  
L. C. Tien ◽  
Y. Kwon ◽  
J. R. La Roche ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ultra Violet ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Zno Nanowire ◽  
Current Increase ◽  
Uv Illumination ◽  
Source Current

ABSTRACTSingle ZnO nanowire metal-oxide semiconductor field effect transistors (MOSFETs) were fabricated using nanowires grown by site selective Molecular Beam Epitaxy. When measured in the dark at 25°C, the depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼-3V and a maximum transconductance of order 0.3 mS/mm. Under ultra-violet (366nm) illumination, the drain-source current increase by approximately a factor of 5 and the maximum transconductance is ∼ 5 mS/mm. The channel mobility is estimated to be ∼3 cm2 /V.s, which is comparable to that reported for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ∼25 in the dark and ∼125 under UV illumination.

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