450 meV hole localization in GaSb/GaAs quantum dots

2003 ◽  
Vol 82 (16) ◽  
pp. 2706-2708 ◽  
Author(s):  
M. Geller ◽  
C. Kapteyn ◽  
L. Müller-Kirsch ◽  
R. Heitz ◽  
D. Bimberg
Keyword(s):  
Quantum Dots ◽  
Hole Localization

scholarly journals Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP (Phys. Status Solidi B 10/2016)

2016 ◽  
Vol 253 (10) ◽  
pp. 1869-1869
Author(s):  
Leo Bonato ◽  
Ismail Firat Arikan ◽  
Ludovic Desplanque ◽  
Christophe Coinon ◽  
Xavier Wallart ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Localization Energy ◽  
Hole Localization

scholarly journals Investigation of photoluminescence kinetics CuInS2/ZnS quantum dots

2021 ◽  
Vol 2058 (1) ◽  
pp. 012007
Author(s):  
A A Lazareva ◽  
I A Reznik ◽  
A Yu Dubavik ◽  
A V Veniaminov ◽  
A O Orlova
Keyword(s):  
Quantum Dots ◽  
Laser Pulse ◽  
Delay Time ◽  
Room Temperature ◽  
Spectral Diffusion ◽  
Photoluminescence Band ◽  
Excitation Laser ◽  
Excitation Laser Pulse ◽  
Kinetics Of ◽  
Hole Localization

Abstract The kinetics of photoluminescence of CuInS2/ZnS quantum dots at room temperature has been studied. We show that the parameters of the photoluminescence band of our quantum dots, i.e. its position and FWHM, do not depend on the delay time after the excitation laser pulse. These may suggest the spectral diffusion of photoluminescence of CuInS2/ZnS quantum dots due to hole localization at different Cu sites.

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

2016 ◽  
Vol 253 (10) ◽  
pp. 1877-1881 ◽  
Author(s):  
Leo Bonato ◽  
Ismail Firat Arikan ◽  
Ludovic Desplanque ◽  
Christophe Coinon ◽  
Xavier Wallart ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Localization Energy ◽  
Hole Localization

scholarly journals 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

2015 ◽  
Vol 106 (4) ◽  
pp. 042102 ◽  
Author(s):  
Leo Bonato ◽  
Elisa M. Sala ◽  
Gernot Stracke ◽  
Tobias Nowozin ◽  
André Strittmatter ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Storage Time ◽  
Room Temperature Storage ◽  
Localization Energy ◽  
Hole Localization ◽  
Temperature Storage

Electron and hole localization in coupled InP/InGaP self-assembled quantum dots

2002 ◽  
Vol 13 (2-4) ◽  
pp. 237-240 ◽  
Author(s):  
M Tadić ◽  
F.M Peeters ◽  
B Partoens ◽  
K.L Janssens
Keyword(s):  
Quantum Dots ◽  
Self Assembled ◽  
Hole Localization

scholarly journals Electron-hole localization in coupled quantum dots

2002 ◽  
Vol 65 (16) ◽  
Author(s):  
Filippo Troiani ◽  
Ulrich Hohenester ◽  
Elisa Molinari
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Hole Localization

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

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