scholarly journals Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN

2003 ◽  
Vol 82 (13) ◽  
pp. 2050-2052 ◽  
Author(s):  
C. Dı́az-Guerra ◽  
J. Piqueras ◽  
A. Cavallini
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Time Resolved

Direct Observation of Bulk and Interface States in GaN on Sapphire grown by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
S. H. Goss ◽  
A. P. Young ◽  
L. J. Brillson ◽  
D. C. Look ◽  
R. J. Molnar
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Semiconductor Film ◽  
Physical Origin ◽  
Cross Sectional ◽  
Cathodoluminescence Spectroscopy ◽  
Electron Imaging ◽  
Cathodoluminescence Imaging

ABSTRACTWe have used an ultrahigh vacuum scanning electron microscope to carry out cross sectional secondary electron imaging, cathodoluminescence spectroscopy, and cathodoluminescence imaging on GaN grown on sapphire by hydride vapor phase epitaxy. These measurements provide evidence for deep level defects highly localized at the GaN, sapphire interface as well as defects extending into both the semiconductor film and the substrate. The different spatial distributions of these radiative defects provide information on the physical origin of these electrically active features.

Spatio-Time-Resolved Cathodoluminescence Studies on Freestanding GaN Substrates Grown by Hydride Vapor Phase Epitaxy

2013 ◽  
Vol 50 (42) ◽  
pp. 1-8 ◽  
Author(s):  
S. F. Chichibu ◽  
Y. Ishikawa ◽  
M. Tashiro ◽  
K. Hazu ◽  
K. Furusawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Time Resolved

Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy

1995 ◽  
Vol 395 ◽  
Author(s):  
R.J. Molnar ◽  
R. Aggarwal ◽  
Z.L. Liau ◽  
E.R. Brown ◽  
I. Melngailis ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Reactor Design ◽  
Vapor Phase Epitaxy ◽  
Stimulated Emission ◽  
Hydride Vapor Phase Epitaxy ◽  
Nitrogen Laser ◽  
High Quality ◽  
Plan View ◽  
Surface Pretreatment

ABSTRACTGallium nitride (GaN) films have been grown by hydride vapor phase epitaxy (HVPE) in a vertical reactor design. We report on GaN growth directly on sapphire using a GaCl surface pretreatment. The electrical properties of these films compare favorably with the highest values reported in the literature for GaN. Specifically, a room temperature Hall mobility as high as 540 cm2 /V-s, with a corresponding carrier concentration of 2×1017 cm−3, have been attained. Additionally, the vesical reactor design has assisted in reducing nonuniformities in both film thickness as well as in transport properties due to depletion effects, as compared with horizontal designs. The dislocation density in these films has been determined by plan-view transmission electron microscopy to be ∼3×l08 cm−2 .Photoluminescence spectra obtained at 2 K show intense, sharp, near-bandedge emission with minimal deep level emissions. Stimulated emission has been observed in these films, utilizing a nitrogen laser pump source (λ=337.1 nm) with a threshold pump power of ∼0.5 MW/cm2 . These results suggest that HVPE is viable for the growth of high-quality nitride films, particularly for the subsequent homoepitaxial overgrowth of device structures by other growth methods such as OMVPE and MBE.

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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