Fabrication and magnetoresistive effect of current perpendicular to plane devices using half-metallic Fe3O4 thin films on metallic films

2003 ◽  
Vol 93 (10) ◽  
pp. 8029-8031 ◽  
Author(s):  
H. Takahashi ◽  
S. Soeya ◽  
J. Hayakawa ◽  
K. Ito ◽  
A. Kida ◽  
...  
Keyword(s):  
Thin Films ◽  
Metallic Films ◽  
Half Metallic ◽  
Current Perpendicular To Plane ◽  
Magnetoresistive Effect

In-Situ TEM Study of Plastic Stress Relaxation Mechanisms and Interface Effects in Metallic Films

2005 ◽  
Vol 875 ◽  
Author(s):  
Marc Legros ◽  
Gerhard Dehm ◽  
T. John Balk
Keyword(s):  
Thin Films ◽  
High Strength ◽  
Dislocation Motion ◽  
Dislocation Nucleation ◽  
Film Stress ◽  
In Situ Tem ◽  
Metallic Films ◽  
Cross Sectional ◽  
Thin Foils

AbstractTo investigate the origin of the high strength of thin films, in-situ cross-sectional TEM deformation experiments have been performed on several metallic films attached to rigid substrates. Thermal cycles, comparable to those performed using laser reflectometry, were applied to thin foils inside the TEM and dislocation motion was recorded dynamically on video. These observations can be directly compared to the current models of dislocation hardening in thin films. As expected, the role of interfaces is crucial, but, depending on their nature, they can attract or repel dislocations. When the film/interface holds off dislocations, experimental values of film stress match those predicted by the Nix-Freund model. In contrast, the attracting case leads to higher stresses that are not explained by this model. Two possible hardening scenarios are explored here. The first one assumes that the dislocation/interface attraction reduces dislocation mobility and thus increases the yield stress of the film. The second one focuses on the lack of dislocation nucleation processes in the case of attracting interfaces, even though a few sources have been observed in-situ.

Surfactant-Mediated Epitaxial Growth of Metallic Thin Films

2010 ◽  
Vol 117 ◽  
pp. 55-61
Author(s):  
Masao Kamiko ◽  
Ryoichi Yamamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Film Growth ◽  
Thin Film Growth ◽  
Growth Mode ◽  
Metallic Thin Films ◽  
Layer By Layer ◽  
Metallic Films ◽  
Heteroepitaxial Growth

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

Reactively sputtered half-metallic Fe3O4 thin films at room temperature on polymethyl methacrylate: A perspective for flexible spintronics

2020 ◽  
Vol 46 (11) ◽  
pp. 19302-19310
Author(s):  
Mohammad Shahnawaze Ansari ◽  
Mohd Hafiz Dzarfan Othman ◽  
Mohammad Omaish Ansari ◽  
Sana Ansari ◽  
Huda Abdullah
Keyword(s):  
Thin Films ◽  
Polymethyl Methacrylate ◽  
Room Temperature ◽  
Half Metallic

Magnetoresistive effect in thin films

1967 ◽  
Vol 10 (6) ◽  
pp. 110-112
Author(s):  
N. I. Vtyurin ◽  
A. A. Kovalevich
Keyword(s):  
Thin Films ◽  
Magnetoresistive Effect

scholarly journals The electrical conductivity of thin metallic films I—Rubidium on pyrex glass surfaces

1936 ◽  
Vol 157 (891) ◽  
pp. 311-330 ◽  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electrical Conductivity ◽  
Film Thickness ◽  
High Vacuum ◽  
Mean Free Path ◽  
Metallic Films ◽  
Bulk Metal ◽  
Modern Technique ◽  
Glass Surfaces

This paper describes measurements of the resistivity of thin films of rubidium, deposited on cooled pyrex surfaces by a method which allows the use of the conditions of purity and high vacuum possible with modern technique. In this work, by vigorous heat treatment in high vacua, clean pyrex surfaces have been obtained on which stable and coherent films as thin as 40 A. have been produced. Conductivities have been obtained with a number of atoms on the surface corresponding to less than the number contained in a monatomic layer of rubidium; moreover, the approach of thicker films to the resistivity of the bulk metal is in agreement with that calculated from a simple theory which takes account of the fact that the film thickness is less than the normal electronic mean free path in the bulk metal.

scholarly journals Chemical bath deposition of Fe-doped ZnS thin films: Investigations of their ferromagnetic and half-metallic properties

2015 ◽  
Vol 39 ◽  
pp. 283-291 ◽  
Author(s):  
Muhammad Saeed Akhtar ◽  
Mohammad Azad Malik ◽  
Yousef G. Alghamdi ◽  
Khuram Shahzad Ahmad ◽  
Saira Riaz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Half Metallic
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