Magnetoresistance in magnetic multilayers with the nano-oxide layer

2003 ◽  
Vol 93 (10) ◽  
pp. 7699-7701 ◽  
Author(s):  
Sui-Pin Chen ◽  
Ching-Ray Chang ◽  
Chih-Huang Lai
Author(s):  
Y. Kamiguchi ◽  
H. Yuasa ◽  
H. Fukuzawa ◽  
K. Koui ◽  
H. Iwasaki ◽  
...  
Keyword(s):  

2009 ◽  
Vol 105 (3) ◽  
pp. 033915 ◽  
Author(s):  
Wei-Chih Chien ◽  
Yeong-Der Yao ◽  
Jiann-Kuo Wu ◽  
Chi-Kuen Lo ◽  
Ruei-Feng Hung ◽  
...  

2004 ◽  
Vol 272-276 ◽  
pp. 1903-1904 ◽  
Author(s):  
D.M. Jeon ◽  
J.P. Lee ◽  
D.H. Lee ◽  
S.Y. Yoon ◽  
Y.S. Kim ◽  
...  

2004 ◽  
Vol 201 (8) ◽  
pp. 1716-1719
Author(s):  
S. Y. Yoon ◽  
Y. I. Kim ◽  
D. H. Lee ◽  
Y. S. Kim ◽  
S. J. Suh

2005 ◽  
Vol 475 (1-2) ◽  
pp. 243-245 ◽  
Author(s):  
D.M. Jeon ◽  
J.P. Lee ◽  
D.H. Lee ◽  
S.Y. Yoon ◽  
J.H. Kim ◽  
...  

2007 ◽  
Vol 1032 ◽  
Author(s):  
Jeong Dae Suh ◽  
C.A. Ross

AbstractWe have investigated the influence of the nano-oxide layer positions on giant magnetoresistance(GMR) of the NiFe(9nm)/Cu(4nm)/Co(5nm) pseudo spin valves. Nano-oxide layer positions had a several effects on the multilayer structure that changes its magnetotransport behavior. GMR ratio varied between 2.8% and 0.15% depending on the nano-oxide layer positions within the stack. The increase of the GMR ratio was accompanied by increase in resistance change, decrease in sheet resistance, and decrease in surface roughness. These significant variations of GMR ratio was explained by the changes on the spin dependent scattering or current shunting effect. Our results showed that appropriate placement of a nano-oxide layer was essential fo optimize magnetoresistance and properties of spin valves.


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