High-speed focused-ion-beam patterning for guiding the growth of anodic alumina nanochannel arrays

2003 ◽  
Vol 82 (8) ◽  
pp. 1281-1283 ◽  
Author(s):  
N. W. Liu ◽  
A. Datta ◽  
C. Y. Liu ◽  
Y. L. Wang
Keyword(s):  
High Speed ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Anodic Alumina ◽  
Ion Beam Patterning ◽  
Nanochannel Arrays

Order–disorder transition of anodic alumina nanochannel arrays grown under the guidance of focused-ion-beam patterning

2004 ◽  
Vol 84 (14) ◽  
pp. 2509-2511 ◽  
Author(s):  
C. Y. Liu ◽  
A. Datta ◽  
N. W. Liu ◽  
C. Y. Peng ◽  
Y. L. Wang
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Anodic Alumina ◽  
Disorder Transition ◽  
Ion Beam Patterning ◽  
Nanochannel Arrays

Critical issues in the focused ion beam patterning of nanometric hole matrixes on GaAs based semiconducting devices

2006 ◽  
Vol 17 (6) ◽  
pp. 1758-1762 ◽  
Author(s):  
M Catalano ◽  
A Taurino ◽  
M Lomascolo ◽  
A Schertel ◽  
A Orchowski
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Critical Issues ◽  
Ion Beam Patterning

Focused‐Ion‐Beam‐Based Selective Closing and Opening of Anodic Alumina Nanochannels for the Growth of Nanowire Arrays Comprising Multiple Elements

2008 ◽  
Vol 20 (13) ◽  
pp. 2547-2551 ◽  
Author(s):  
Nai‐Wei Liu ◽  
Chih‐Yi Liu ◽  
Huai‐Hsien Wang ◽  
Chen‐Feng Hsu ◽  
Ming‐Yu Lai ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Anodic Alumina ◽  
Nanowire Arrays

A closed UHV focused ion beam patterning and MBE regrowth technique

1995 ◽  
Vol 35 (1-3) ◽  
pp. 208-213 ◽  
Author(s):  
H. Muessig ◽  
Th. Hackbarth ◽  
H. Brugger ◽  
A. Orth ◽  
J.P. Reithmaier ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Patterning

scholarly journals Optimization of Focused Ion Beam Patterning Parameters for Direct Integration of Plasmonic Nanostructures on Silicon Photodiodes

2021 ◽  
Vol 10 (1) ◽  
pp. 2
Author(s):  
Elia Scattolo ◽  
Alessandro Cian ◽  
Damiano Giubertoni ◽  
Giovanni Paternoster ◽  
Luisa Petti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Finite Difference Time Domain ◽  
Focused Ion Beam ◽  
Silver Film ◽  
Ion Beam ◽  
Plasmonic Nanostructures ◽  
Direct Integration ◽  
Active Device ◽  
Difference Time ◽  
Ion Beam Patterning

The possibility of integrating plasmonic nanostructures directly on an active device, such as a silicon photodetector, is a challenging task of interest in many applications. Among the available nanofabrication techniques to realize plasmonic nanostructures, Focused Ion Beam (FIB) is surely the most promising, even if it is characterized by certain limitations, such as ion implantation in the substrate. In this work, we demonstrate the direct integration of plasmonic nanostructures directly on an active Si-photodetector by patterning a silver film with FIB. To avoid ion implantation and to therefore guarantee unaltered device behavior, both the patterning parameters and the geometry of the nanostructures were implemented by Montecarlo and Finite-Difference Time-Domain simulations.

Using Energy Dispersive Spectroscopy (EDS) to Determine the Resistance of FIB Jumpers for Circuit Edit

2014 ◽  
Author(s):  
Michael DiBattista ◽  
Corey Senowitz ◽  
Hasan Faraby ◽  
Prabhakar Bandaru
Keyword(s):  
Integrated Circuits ◽  
Energy Dispersive Spectroscopy ◽  
High Speed ◽  
Focused Ion Beam ◽  
Chemical Elements ◽  
Ion Beam ◽  
Metal Resistance ◽  
Energy Dispersive ◽  
Deposited Metal ◽  
Organometallic Precursors

Abstract A key capability of focused ion beam (FIB) tools is the ability to deposit conductive materials by introducing organometallic precursors such as tungsten hexacarbonyl [W(CO)6] or (methylcyclopentadienl) trimethyl platinum [C9H17Pt]. The FIB deposited metal is often used in applications such as the modification of integrated circuits (ICs) by creating new electrical connection on the device. The electrical properties of the FIB material are of particular concern to high speed digital and radio frequency (RF) circuit designers because the resistivity of the FIB deposited metal is orders of magnitude higher in value than the near bulk resistivity value of the metals used in IC manufacturing. In this paper, we developed a correlation between the chemical composition of the FIB deposited metal and the electrical resistivity using an effective media theory (EMT) model. Analysis shows that gallium from the ion beam is the dominant contributor to lowering the resistivity of the jumper. The results of this work and model allow us to understand the role the chemical elements play in the electrical resistance of the FIB electrical jumper and to estimate the FIB metal resistance from energy dispersive spectroscopy (EDS) analysis and the geometry.

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