Nitrogen-induced decrease of the electron effective mass in GaAs1−xNx thin films measured by thermomagnetic transport phenomena

2003 ◽  
Vol 82 (8) ◽  
pp. 1236-1238 ◽  
Author(s):  
D. L. Young ◽  
J. F. Geisz ◽  
T. J. Coutts
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Transport Phenomena ◽  
Electron Effective Mass ◽  
Thermomagnetic Transport

INVESTIGATION OF TRANSPORT AND OPTICAL PROPERTIES OF MESOPOROUS ANATASE AND RUTILE TiO2 FILMS FOR APPLICATION IN DYE-SENSITIZED SOLAR CELLS

2012 ◽  
Vol 26 (19) ◽  
pp. 1250123 ◽  
Author(s):  
DIVYA JYOTI ◽  
DEVENDRA MOHAN ◽  
RAKESH DHAR
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Sol Gel ◽  
Dye Sensitized Solar Cells ◽  
High Mobility ◽  
Lattice Relaxation ◽  
Spectroscopic Studies ◽  
Electron Effective Mass ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

The transport of electrons through TiO 2 anatase and rutile thin films synthesized via sol–gel route has been investigated using electronic and optical spectroscopic studies. Mesoporosity of the films is confirmed by poroellipsometry. A smaller electron effective mass in anatase can be accounted for larger effective Bohr radius of trap electrons observed in anatase than in rutile. Further, the smaller effective mass in anatase favors high mobility. A mott transition is observed in anatase with change in temperature but not in rutile. Luminescence of self-trapped excitons is observed in anatase thin films, that implies a strong lattice relaxation.

Nitrogen composition dependence of electron effective mass inGaAs1−xNx

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
T. Dannecker ◽  
Y. Jin ◽  
H. Cheng ◽  
C. F. Gorman ◽  
J. Buckeridge ◽  
...  
Keyword(s):  
Effective Mass ◽  
Composition Dependence ◽  
Electron Effective Mass

Temperature dependence of the electron effective mass in InSb

1974 ◽  
Vol 9 (2) ◽  
pp. 568-571 ◽  
Author(s):  
E. S. Koteles ◽  
W. R. Datars
Keyword(s):  
Temperature Dependence ◽  
Effective Mass ◽  
Electron Effective Mass

Nitrogen-induced enhancement of the electron effective mass in InNxAs1−x

2002 ◽  
Vol 80 (5) ◽  
pp. 796-798 ◽  
Author(s):  
W. K. Hung ◽  
K. S. Cho ◽  
M. Y. Chern ◽  
Y. F. Chen ◽  
D. K. Shih ◽  
...  
Keyword(s):  
Effective Mass ◽  
Electron Effective Mass

Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

2022 ◽  
Vol 43 (1) ◽  
pp. 012801
Author(s):  
R. Rahaman ◽  
M. Sharmin ◽  
J. Podder
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis Technique ◽  
Band Gap Energy ◽  
Dielectric Constants ◽  
X Rays ◽  
Electron Effective Mass ◽  
Mn Doping ◽  
Type Transition ◽  
Mn Doped

Abstract Here we discuss the synthesis of copper (II) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at% Mn using the spray pyrolysis technique. As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at% Mn doping. Energy dispersive analysis of X-rays confirmed the chemical composition of the films. X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the ( 11) peak. Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67–2.90 eV and 0.11–1.73 eV, respectively. Refractive index and static dielectric constants were computed from the optical spectra. Electrical resistivity of CuO and Mn-doped CuO (Mn:CuO) thin films was found in the range from 10.5 to 28.6 Ω·cm. The tiniest electron effective mass was calculated for 4 at% Mn:CuO thin films. P to n-type transition was observed for 4 at% Mn doping in CuO films. Carrier concentration and mobility were found in the orders of 1017 cm–3 and 10–1 cm2/(V·s), respectively. The Hall coefficient was found to be between 9.9 and 29.8 cm3/C. The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

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