Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO

2003 ◽  
Vol 82 (5) ◽  
pp. 823-825 ◽  
Author(s):  
Hiromichi Ohta ◽  
Hiroshi Mizoguchi ◽  
Masahiro Hirano ◽  
Satoru Narushima ◽  
Toshio Kamiya ◽  
...  
2014 ◽  
Vol 105 (11) ◽  
pp. 112105 ◽  
Author(s):  
Munetoshi Seki ◽  
Masanao Takahashi ◽  
Masaki Adachi ◽  
Hiroyasu Yamahara ◽  
Hitoshi Tabata

2012 ◽  
Vol 51 ◽  
pp. 10NC06
Author(s):  
Teruaki Yamamoto ◽  
Takayuki Negami ◽  
Koji Matsubara ◽  
Shigeru Niki

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NC06 ◽  
Author(s):  
Teruaki Yamamoto ◽  
Takayuki Negami ◽  
Koji Matsubara ◽  
Shigeru Niki

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  

2019 ◽  
Vol 139 (11) ◽  
pp. 375-380
Author(s):  
Harutoshi Takahashi ◽  
Yuta Namba ◽  
Takashi Abe ◽  
Masayuki Sohgawa

2015 ◽  
Vol 135 (11) ◽  
pp. 474-475
Author(s):  
Koji Sugano ◽  
Ryoji Hiraoka ◽  
Toshiyuki Tsuchiya ◽  
Osamu Tabata

Author(s):  
Alan Huffman ◽  
John Lannon ◽  
Matthew Lueck ◽  
Christopher Gregory ◽  
Dorota Temple

Sign in / Sign up

Export Citation Format

Share Document