Temperature dependence of the dielectric response of anodized Al–Al2O3–metal capacitors

2003 ◽  
Vol 93 (6) ◽  
pp. 3461-3469 ◽  
Author(s):  
T. W. Hickmott
Keyword(s):  
Temperature Dependence ◽  
Dielectric Response

Temperature Dependence of the Dielectric Response and Critical Point Energies of Bi1.85Gd0.15Te3

2018 ◽  
Vol 18 (9) ◽  
pp. 6321-6325
Author(s):  
Hoang Tung Nguyen ◽  
Tae Jung Kim ◽  
Han Gyeol Park ◽  
Van Long Le ◽  
Jinsu Kim ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Critical Point ◽  
Dielectric Response

TEMPERATURE DEPENDENCE OF THE n PARAMETER IN THE DISSADO–HILL MODEL

2013 ◽  
Vol 27 (06) ◽  
pp. 1350040 ◽  
Author(s):  
A. DOFF ◽  
J. C. GENTILINI ◽  
O. CAMBRUZZI
Keyword(s):  
Temperature Dependence ◽  
Quantum Electrodynamics ◽  
Dielectric Response ◽  
Dielectric Material ◽  
Dielectric Materials ◽  
Energy Scale ◽  
Dielectric Polarization ◽  
Hill Model ◽  
Running Coupling ◽  
Many Body Interactions

The response of a dielectric material to the application of an external electric field is characterized by the dependence of the complex dielectric polarization susceptibility on frequency ω and external factors such as temperature T. Even today, we do not have a universal model that describes the behavior for all materials. However, Dissado and Hill (DH) have proposed a model based on many-body interactions that is able to explain the dielectric response observed in many dielectric materials. By considering an analogy between the description given in the cluster approach to the structure of imperfect materials and the formalism developed in quantum field theory (QFT), particularly the scale invariance behavior displayed by the dependence of the running coupling constant of quantum electrodynamics (QED) on the energy scale Λ, we will include temperature dependence in the (n) and (m) parameters of the DH model to consider the effects of temperature on the dielectric response of some materials.

Admittance and Photoadmittance Spectroscopy of Zinc Oxide Layers Grown on p-Si Substrates by Spin Coating Method

2013 ◽  
Vol 200 ◽  
pp. 27-32
Author(s):  
Pawel Popielarski ◽  
Waclaw Bala ◽  
Kazimierz Paprocki
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Dielectric Response ◽  
Ac Conductivity ◽  
Signal Amplitude ◽  
Zno Thin Films ◽  
Si Substrates ◽  
Universal Power Law ◽  
Coating Method ◽  
Different Temperatures

In this work, the dielectric response of ZnO thin films has been studied over a temperature range of 200 K - 550 K. The dielectric response of polycrystalline ZnO thin films in the frequency domain was measured from 42 Hz - to 5 MHz with a small AC signal amplitude at different temperatures. Influence of the light on conductivity has been also investigated. A universal power law relation was brought into picture to explain the frequency dependence of AC conductivity. The temperature dependence of AC conductivity was analyzed in detail. The activation energy obtained from the temperature dependence of AC conductivity was attributed to the shallow trap-controlled space charge conduction in the bulk of the sample.

Dielectric Properties of Pulsed Excimer Laser Ablated BaBi2Nb2O9 Thin Films

2002 ◽  
Vol 748 ◽  
Author(s):  
Apurba Laha ◽  
S. B. Krupanidhi ◽  
S. Saha
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Dielectric Constant ◽  
Temperature Dependence ◽  
Loss Tangent ◽  
Dielectric Response ◽  
Room Temperature ◽  
Dielectric Constant And Loss ◽  
Wide Range ◽  
Room Temperature Dielectric Constant

ABSTRACTThe dielectric response of BaBi2Nb2O9 (BBN) thin films has been studied as a function of frequency over a wide range of temperatures. Both dielectric constant and loss tangent of BBN thin films showed a ‘power law’ dependence with frequency, which was analyzed using the Jonscher's universal dielectric response model. Theoretical fits were utilized to compare the experimental results and also to estimate the value of temperature dependence parameters such as n(T) and a(T) used in the Jonscher's model. The room temperature dielectric constant (ε') of the BBN thin films was 214 with a loss tangent (tanδ) of 0.04 at a frequency of 100 kHz. The films exhibited the second order dielectric phase transition from ferroelectric to paraelectric state at a temperature of 220 °C. The nature of phase transition was confirmed from the temperature dependence of dielectric constant and sponteneous polarization,respectively. The calculated Currie constant for BBN thin films was 4 × 105°C.

Temperature dependence of the dielectric response of lithium niobate

2001 ◽  
Vol 62 (5) ◽  
pp. 973-976 ◽  
Author(s):  
D Xue ◽  
K Betzler ◽  
H Hesse ◽  
D Lammers
Keyword(s):  
Lithium Niobate ◽  
Temperature Dependence ◽  
Dielectric Response

scholarly journals Temperature Dependence of Microwave and THz Dielectric Response in Srn + 1TinO3n + 1 (n = 1–4)

2004 ◽  
Vol 62 (1) ◽  
pp. 199-203 ◽  
Author(s):  
D. NOUJNI ◽  
S. KAMBA ◽  
A. PASHKIN ◽  
V. BOVTUN ◽  
J. PETZELT ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Dielectric Response

The α-relaxation process in simple glass forming liquid m-toluidine. I. The temperature dependence of the dielectric response

2001 ◽  
Vol 114 (16) ◽  
pp. 7118-7123 ◽  
Author(s):  
Maria Cutroni ◽  
Andrea Mandanici ◽  
Anna Spanoudaki ◽  
Rolf Pelster
Keyword(s):  
Temperature Dependence ◽  
Relaxation Process ◽  
Dielectric Response ◽  
Glass Forming
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