Dielectric relaxation and strain behavior of 95.5% Pb(Zn1/3Nb2/3)O3–4.5% PbTiO3 single crystals at cryogenic temperatures

2003 ◽  
Vol 82 (5) ◽  
pp. 790-792 ◽  
Author(s):  
Zhi Yu ◽  
Chen Ang ◽  
E. Furman ◽  
L. E. Cross
Keyword(s):  
Dielectric Relaxation ◽  
Single Crystals ◽  
Cryogenic Temperatures ◽  
Strain Behavior

Microstructure and dielectric relaxation of dipolar defects in Mn-doped (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 single crystals

2013 ◽  
Vol 69 (5) ◽  
pp. 377-380 ◽  
Author(s):  
Xiaobing Li ◽  
Xiangyong Zhao ◽  
Bo Ren ◽  
Haosu Luo ◽  
Wenwei Ge ◽  
...  
Keyword(s):  
Dielectric Relaxation ◽  
Single Crystals ◽  
Mn Doped

Dielectric relaxation in Bi2Ti2O7 single crystals

2019 ◽  
Vol 553 (1) ◽  
pp. 60-65
Author(s):  
A. A. Bush ◽  
M. V. Talanov ◽  
A. I. Stash ◽  
S. A. Ivanov ◽  
K. Е. Kamentsev
Keyword(s):  
Dielectric Relaxation ◽  
Single Crystals

Dependence of dielectric relaxation on ac drive in [Pb(Mg1/3Nb2/3)O3](1−x)–(PbTiO3)x single crystals

1999 ◽  
Vol 85 (3) ◽  
pp. 1693-1697 ◽  
Author(s):  
Eugene V. Colla ◽  
Eugene L. Furman ◽  
Surya M. Gupta ◽  
Nikolai K. Yushin ◽  
Dwight Viehland
Keyword(s):  
Dielectric Relaxation ◽  
Single Crystals ◽  
Ac Drive

Microwave losses of undoped n-type silicon and undoped 4H-SiC single crystals at cryogenic temperatures

2014 ◽  
Vol 10 (3) ◽  
pp. 541-549 ◽  
Author(s):  
Ho Sang Jung ◽  
Woo Il Yang ◽  
Man Soon Cho ◽  
Kee Nam Joo ◽  
Sang Young Lee
Keyword(s):  
Single Crystals ◽  
Cryogenic Temperatures ◽  
Type Silicon ◽  
Microwave Losses

Orientation Dependence of Dynamic Recrystallization Behavior of Al Single Crystals

2004 ◽  
Vol 449-452 ◽  
pp. 31-36
Author(s):  
Yasuhiro Miura ◽  
Kentaro Ihara
Keyword(s):  
Dynamic Recrystallization ◽  
Single Crystals ◽  
Orientation Dependence ◽  
Crystallographic Analysis ◽  
High Temperature Deformation ◽  
Temperature Deformation ◽  
Stress Strain ◽  
Strain Behavior ◽  
The Matrix ◽  
Dynamic Recrystallization Behavior

An experimental study on the microstructure development and stress–strain behavior during high temperature deformation of aluminum (Al) single crystals was made by using X-ray Laue technique and the electron backscatter pattern (EBSP) technique. The main purpose was to clarify the process of dynamic recrystallization (DRX). The measured stress-strain curves with large stress peaks and the new Laue spots without streaks at around the stress peaks confirmed the occurrence of DRX in Al single crystals with initial compression axis <111>, <011> or <001>. Crystallographic analysis by the Laue technique and EBSP technique show that the DRX grain and the matrix have an <121> axis in common in the <111> crystal, an <101> axsis in the <011> and <001> crystals. For the <111> crystal, the unrecrystallized region near the DRX grain consists of subgrains adjoined each other with <112> tilt boundaries and the size of subgrains becomes smaller and the misfit at subgrain boundaries becomes larger as the DRX grain boundaries are approached. These results suggest that DRX grains are nucleated through the development of subgrains.

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