Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy

2003 ◽  
Vol 93 (4) ◽  
pp. 2047-2050 ◽  
Author(s):  
Kulandaivel Jeganathan ◽  
Toshihide Ide ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gan Heterostructure

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 182-184 ◽  
pp. 255-258
Author(s):  
H. Heinke ◽  
Franz Dieter Fischer ◽  
A. Waag ◽  
T. Litz ◽  
M. Korn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

1999 ◽  
Vol 74 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
Hanxuan Li ◽  
Theda Daniels-Race ◽  
Zhanguo Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Growth Mode

Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Arscott ◽  
M. Missous ◽  
L. Dobaczewski ◽  
P. C. Harness ◽  
D. K. Maude ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electron Concentration ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Wave Functions ◽  
Potential Well ◽  
Electronic Wave ◽  
Hall Measurements ◽  
Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

2011 ◽  
Vol 110 (3) ◽  
pp. 033501 ◽  
Author(s):  
Y. Kotsar ◽  
B. Doisneau ◽  
E. Bellet-Amalric ◽  
A. Das ◽  
E. Sarigiannidou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation

Damage Removal and Strain Relaxation in As + -Implanted Si 0.57 Ge 0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy

1997 ◽  
Vol 14 (3) ◽  
pp. 209-212 ◽  
Author(s):  
Zou Lü-fan (Zou Lyu-fan) ◽  
Wang Zhan-guo ◽  
Sun Dian-zhao ◽  
Fan Ti-wen ◽  
Liu Xue-feng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gas Source

Investigation on the electrical transport properties of highly (00l)-textured Sb2Te3 films deposited by molecular beam epitaxy

2014 ◽  
Vol 115 (2) ◽  
pp. 024307 ◽  
Author(s):  
Xiangpeng Zhang ◽  
Zhigang Zeng ◽  
Chao Shen ◽  
Ziqiang Zhang ◽  
Zhichong Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Electrical Transport Properties
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