Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization

2002 ◽  
Vol 81 (27) ◽  
pp. 5129-5131 ◽  
Author(s):  
M. Hao ◽  
J. Zhang ◽  
X. H. Zhang ◽  
S. Chua
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Studies

Photoluminescence studies of GaAs-GaAlAs multiple quantum wells

1985 ◽  
Vol 2 (12) ◽  
pp. 529-532
Author(s):  
Xu Zhong-ying ◽  
Xu Ji-zong ◽  
Chen Zong-gui ◽  
Zhuang Wei-hua ◽  
Xu Jun-ying ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Studies

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

Photoluminescence studies in modulation doped GaInNAs/GaAs multiple quantum wells

2007 ◽  
Vol 4 (2) ◽  
pp. 682-685
Author(s):  
M. Yilmaz ◽  
B. Ulug ◽  
A. Ulug ◽  
A. Cicek ◽  
N. Balkan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Studies

Photoluminescence studies of modulation-doped strained multiple quantum wells

1995 ◽  
Vol 152 (1-2) ◽  
pp. 28-33 ◽  
Author(s):  
W.Z. Shen ◽  
W.G. Tang ◽  
Z.Y. Li ◽  
S.C. Shen ◽  
A. Dimoulas
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Studies

Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells

2008 ◽  
Vol 5 (6) ◽  
pp. 1846-1848 ◽  
Author(s):  
G. D. Chern-Metcalfe ◽  
E. D. Readinger ◽  
H. Shen ◽  
M. Wraback ◽  
G. Koblmüller ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Studies

Magneto-photoluminescence studies of manganese acceptors in GaAs/AlGaAs multiple quantum wells

1985 ◽  
Vol 55 (10) ◽  
pp. 865-868 ◽  
Author(s):  
A. Petrou ◽  
M.C. Smith ◽  
C.H. Perry ◽  
J.M. Worlock ◽  
J. Warnock ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Studies
Sign in / Sign up

Export Citation Format

Share Document