Microstructural dependence of electron and hole transport in low-temperature-grown polycrystalline-silicon thin-film solar cells

2002 ◽  
Vol 81 (25) ◽  
pp. 4751-4753 ◽  
Author(s):  
Takuya Matsui ◽  
Riza Muhida ◽  
Tomohiro Kawamura ◽  
Toshihiko Toyama ◽  
Hiroaki Okamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Hole Transport ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

scholarly journals Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

2007 ◽  
Vol 2007 ◽  
pp. 1-11 ◽  
Author(s):  
Mason L. Terry ◽  
Daniel Inns ◽  
Armin G. Aberle
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Computer Modeling ◽  
Quantum Efficiency ◽  
Polycrystalline Silicon ◽  
Internal Quantum Efficiency ◽  
Hydrogen Plasma ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

The changes in open-circuit voltage (Voc), short-circuit current density (Jsc), and internal quantum efficiency (IQE) of aLuminum induced crystallization, ion-assisted deposition (ALICIA) polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA) treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation) are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm) due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

A two-dimensional modeling of the fine-grained polycrystalline silicon thin-film solar cells

2002 ◽  
Vol 403-404 ◽  
pp. 258-262 ◽  
Author(s):  
E Christoffel ◽  
M Rusu ◽  
A Zerga ◽  
S Bourdais ◽  
S Noël ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Thin Film Solar Cells ◽  
Two Dimensional ◽  
Silicon Thin Film ◽  
Fine Grained ◽  
Dimensional Modeling

Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al

2013 ◽  
Vol 113 (4) ◽  
pp. 044519 ◽  
Author(s):  
Christiane Becker ◽  
Marcel Pagels ◽  
Carolin Zachäus ◽  
Beatrix Pollakowski ◽  
Burkhard Beckhoff ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Temperature ◽  
Polycrystalline Silicon ◽  
Chemical Speciation ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film ◽  
Buried Interfaces

Enhanced light trapping in polycrystalline silicon thin-film solar cells using plasma-etched submicron textures

2014 ◽  
Vol 122 ◽  
pp. 146-151 ◽  
Author(s):  
Ying Huang ◽  
Nasim Sahraei ◽  
Per I. Widenborg ◽  
Ian Marius Peters ◽  
Goutam Kumar Dalapati ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Light Trapping ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

Polycrystalline silicon thin-film solar cells prepared by layered laser crystallization with 540mV open circuit voltage

2014 ◽  
Vol 562 ◽  
pp. 430-434 ◽  
Author(s):  
Jonathan Plentz ◽  
Gudrun Andrä ◽  
Annett Gawlik ◽  
Ingmar Höger ◽  
Guobin Jia ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Laser Crystallization ◽  
Silicon Thin Film
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