Energy Loss of a High Charge Bunched Electron Beam in Plasma: Nonlinear Plasma Response and Linear Scaling

2002 ◽  
Author(s):  
J. B. Rosenzweig
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Linear Scaling ◽  
Nonlinear Plasma ◽  
High Charge ◽  
Plasma Response

Probing the Chemistry and Spectroscopy of Radiation-Sensitive Polymers by Parallel-Detection EELS

1990 ◽  
Vol 48 (2) ◽  
pp. 34-35
Author(s):  
E. G. Rightor ◽  
G. P. Young
Keyword(s):  
Electron Beam ◽  
Bisphenol A ◽  
Energy Loss ◽  
Parallel Detection ◽  
Commercial Grade ◽  
Incident Electron Beam ◽  
Ptfe Sample ◽  
Spectroscopic Information ◽  
Edge Features ◽  
Electron Energy Loss

Investigation of neat polymers by TEM is often thwarted by their sensitivity to the incident electron beam, which also limits the usefulness of chemical and spectroscopic information available by electron energy loss spectroscopy (EELS) for these materials. However, parallel-detection EELS systems allow reduced radiation damage, due to their far greater efficiency, thereby promoting their use to obtain this information for polymers. This is evident in qualitative identification of beam sensitive components in polymer blends and detailed investigations of near-edge features of homopolymers.Spectra were obtained for a poly(bisphenol-A carbonate) (BPAC) blend containing poly(tetrafluoroethylene) (PTFE) using a parallel-EELS and a serial-EELS (Gatan 666, 607) for comparison. A series of homopolymers was also examined using parallel-EELS on a JEOL 2000FX TEM employing a LaB6 filament at 100 kV. Pure homopolymers were obtained from Scientific Polymer Products. The PTFE sample was commercial grade. Polymers were microtomed on a Reichert-Jung Ultracut E and placed on holey carbon grids.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

3d Reconstruction of Sub-Nm Beam Profiles in STEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 344-345
Author(s):  
G. Möbus ◽  
R.E. Dunin-Borkowski ◽  
C.J.D. Hethėrington ◽  
J.L. Hutchison
Keyword(s):  
Electron Beam ◽  
Chemical Analysis ◽  
Energy Loss ◽  
Intensity Distribution ◽  
Dark Field ◽  
Beam Forming ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Electron Energy Loss ◽  
Field Imaging

Introduction:Atomically resolved chemical analysis using techniques such as electron energy loss spectroscopy and annular dark field imaging relies on the ability to form a well-characterised sub-nm electron beam in a FEGTEM/STEM [1-2]. to understand EELS+EDX-signal formation upon propagation of a sub-nm beam through materials we first have to assess precisely the beam intensity distribution in vacuum and find conditions for the best obtainable resolution.Experimental Details:Modern TEM/STEM instruments combine features of both imaging and scanning technology. The beam forming capability approaches closely that for dedicated STEMs, while CCD recording devices allow us to measure the beam profile by direct imaging at magnifications up to 1.5 M. The recording of a “z-section” series through the 3D intensity distribution of the cross-over can therefore be realised by recording of a “condenser focal series”.

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