Real-time heat capacity measurement during thin-film deposition by scanning nanocalorimetry

2002 ◽  
Vol 81 (20) ◽  
pp. 3801-3803 ◽  
Author(s):  
M. Zhang ◽  
M. Yu. Efremov ◽  
E. A. Olson ◽  
Z. S. Zhang ◽  
L. H. Allen
Keyword(s):  
Thin Film ◽  
Heat Capacity ◽  
Real Time ◽  
Thin Film Deposition ◽  
Heat Capacity Measurement ◽  
Film Deposition ◽  
Capacity Measurement

Real time analysis of ultra-thin CIGS thin film deposition

2012 ◽  
Author(s):  
Vikash Ranjan ◽  
Krishna Aryal ◽  
Scott Little ◽  
Yunus Erkaya ◽  
Grace Rajan ◽  
...  
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Time Analysis ◽  
Real Time Analysis ◽  
Cigs Thin Film

Investigation of a Microcalorimeter for Thin-Film Heat Capacity Measurement

2005 ◽  
Vol 22 (9) ◽  
pp. 2429-2432 ◽  
Author(s):  
Yu Jun ◽  
Tang Zhen-An ◽  
Zhang Feng-Tian ◽  
Wei Guang-Fen ◽  
Wang Li-Ding
Keyword(s):  
Thin Film ◽  
Heat Capacity ◽  
Heat Capacity Measurement ◽  
Capacity Measurement

Multichannel ellipsometer for real time spectroscopy of thin film deposition from 1.5 to 6.5 eV

2000 ◽  
Vol 71 (9) ◽  
pp. 3451-3460 ◽  
Author(s):  
J. A. Zapien ◽  
R. W. Collins ◽  
R. Messier
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Thin Film Deposition ◽  
Film Deposition

scholarly journals Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition

2018 ◽  
Author(s):  
J. Ortega-Gallegos ◽  
L. E. Guevara-Macías ◽  
A. Lastras-Martínez ◽  
D. Ariza-Flores ◽  
R. E. Balderas-Navarro ◽  
...  
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Thin Film Deposition ◽  
Optical Probe ◽  
Film Deposition ◽  
Real Time Monitoring ◽  
Reflectance Anisotropy

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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