Integrating DNA With Semiconductor Materials: Bio-inorganic Hybrid Devices

2002 ◽  
Author(s):  
Andrew R. Pike
2018 ◽  
Vol 29 (26) ◽  
pp. 26LT02 ◽  
Author(s):  
Shunsuke Yamamoto ◽  
Takahisa Kitanaka ◽  
Tokuji Miyashita ◽  
Masaya Mitsuishi

Author(s):  
Lawrence L. Brott ◽  
Rajesh R. Naik ◽  
Sean M. Kirkpatrick ◽  
Patrick W. Whitlock ◽  
Stephen J. Clarson ◽  
...  

Materials ◽  
2022 ◽  
Vol 15 (1) ◽  
pp. 321
Author(s):  
Yifei Wang ◽  
Xiaoping Zou ◽  
Jialin Zhu ◽  
Chunqian Zhang ◽  
Jin Cheng ◽  
...  

Photoelectric devices can be so widely used in various detection industries that people began to focus on its research. The research of photoelectric sensors with high performance has become an industry goal. In this paper, we prepared photodetectors using organic–inorganic hybrid semiconductor materials with narrow bandgap hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) and investigated the detector photoresponse and time-response characteristics under a single light source. The device exhibits high photoresponsivity and fast response time. The photoresponsivity can reach 1.45 × 10−3 A/W and 8.5 × 10−4 A/W under laser irradiation at 375 nm and 532 nm wavelengths, and the rise and decay times are 63 ms and 62 ms, 62 ms and 64 ms, respectively. The device has excellent performance and this work can extend the application of organic–inorganic hybrid semiconductor materials in photovoltaic and photodetectors.


2011 ◽  
Vol 110-116 ◽  
pp. 3255-3260
Author(s):  
Imran Murtaza ◽  
Khasan S. Karimov ◽  
Muhammad H. Sayyad ◽  
Ibrahim Qazi

The Optoelectronic properties of organic-inorganic hybrid devices consisting of Ag/VOPc/n-Si/Ag structure have been investigated through analyzing the current-voltage characteristics. We have also studied the effect of illumination on the open circuit voltage, capacitance and reverse resistance with consideration of VOPc film thickness. The dark I-V characteristics display rectification behaviour of such hybrid structures and a very high photo-capacitive response under illumination of 200 lx is observed. Furthermore due to the generation of photo induced charges, under illumination, the decrease in reverse bias resistance to one third of its value is observed.


2021 ◽  
pp. 112856
Author(s):  
Hatice Kacus ◽  
Mehmet Yilmaz ◽  
Umit Incekara ◽  
Adem Kocyigit ◽  
Sakir Aydogan

Author(s):  
E.D. Boyes ◽  
P.L. Gai ◽  
D.B. Darby ◽  
C. Warwick

The extended crystallographic defects introduced into some oxide catalysts under operating conditions may be a consequence and accommodation of the changes produced by the catalytic activity, rather than always being the origin of the reactivity. Operation without such defects has been established for the commercially important tellurium molybdate system. in addition it is clear that the point defect density and the electronic structure can both have a significant influence on the chemical properties and hence on the effectiveness (activity and selectivity) of the material as a catalyst. SEM/probe techniques more commonly applied to semiconductor materials, have been investigated to supplement the information obtained from in-situ environmental cell HVEM, ultra-high resolution structure imaging and more conventional AEM and EPMA chemical microanalysis.


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