Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer

2002 ◽  
Vol 81 (16) ◽  
pp. 3067-3069 ◽  
Author(s):  
S. Sanguinetti ◽  
T. Mano ◽  
M. Oshima ◽  
T. Tateno ◽  
M. Wakaki ◽  
...  
2014 ◽  
Vol 875-877 ◽  
pp. 9-13
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.


1998 ◽  
Vol 123-124 ◽  
pp. 352-355 ◽  
Author(s):  
V. Türck ◽  
F. Heinrichsdorff ◽  
M. Veit ◽  
R. Heitz ◽  
M. Grundmann ◽  
...  

2011 ◽  
Vol 98 (18) ◽  
pp. 183509 ◽  
Author(s):  
Hao Feng Lu ◽  
Lan Fu ◽  
Greg Jolley ◽  
Hark Hoe Tan ◽  
Sudersena Rao Tatavarti ◽  
...  

1997 ◽  
Vol 82 (9) ◽  
pp. 4489-4492 ◽  
Author(s):  
Y. T. Dai ◽  
J. C. Fan ◽  
Y. F. Chen ◽  
R. M. Lin ◽  
S. C. Lee ◽  
...  

2009 ◽  
Vol 26 (5) ◽  
pp. 057304
Author(s):  
Xu Zhang-Cheng ◽  
Zhang Ya-Ting ◽  
Jørn M Hvam ◽  
Yoshiji Horikoshi

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