Quantum confinement effects in variable band-gap GaNxAs1−x thin films studied by photoacoustic spectroscopy

2003 ◽  
Vol 74 (1) ◽  
pp. 854-856 ◽  
Author(s):  
J. A. Cardona-Bedoya ◽  
A. Cruz-Orea ◽  
S. A. Tomas-Velazquez ◽  
O. Zelaya-Angel ◽  
J. G. Mendoza-Alvarez
2001 ◽  
Vol 15 (02) ◽  
pp. 191-200 ◽  
Author(s):  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA

Quantum confinement effects on the optical properties of ion beam sputtered nickel oxide thin films are reported. Thin films with crystallite sizes in the range 9 to 14 nm have been deposited on to fused silica substrates. There is an increase in band gap, from 3.4 to 3.9 eV, and a decrease in refractive index, from 2.4 to 1.6, with decrease in crystallite size, that can be attributed to quantum confinement effects. The effective mass approximation has been used to explain the observed behaviour in band gap variation.


2011 ◽  
Vol 83 (24) ◽  
Author(s):  
O. Demichel ◽  
V. Calvo ◽  
P. Noé ◽  
B. Salem ◽  
P.-F. Fazzini ◽  
...  

2011 ◽  
Vol 115 (30) ◽  
pp. 14839-14843 ◽  
Author(s):  
Panagiotis Poulopoulos ◽  
Sotirios Baskoutas ◽  
Spiridon D. Pappas ◽  
Christos S. Garoufalis ◽  
Sotirios A. Droulias ◽  
...  

2011 ◽  
Vol 675-677 ◽  
pp. 243-246 ◽  
Author(s):  
Mei Li Guo ◽  
Xiao Dong Zhang

ZnO nanowires are promising for photonic devices, biosensor and cancer cell imaging. We have performed a first-principles study to evaluate the electronic and optical properties of ZnO nanowires. We have employed the Perdew–Burke–Ernzerhof form of generalized gradient approximation in the frame work of density functional theory. Calculations have been carried out at different configurations. With decreasing diameter, the band gap of ZnO nanowires is increased due to the increase of quantum confinement effects. The results of imaginary part of the dielectric function indicate that the optical transition between valence band and conduction band has shifted to the high energy range as the diameter decreases. The ZnO nanowires show size-tunable optical properties.


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