scholarly journals Energy relaxation during hot-exciton transport in quantum wells: Direct observation by spatially resolved phonon-sideband spectroscopy

2002 ◽  
Vol 81 (15) ◽  
pp. 2794-2796 ◽  
Author(s):  
Hui Zhao ◽  
Sebastian Moehl ◽  
Heinz Kalt
Keyword(s):  
Quantum Wells ◽  
Direct Observation ◽  
Energy Relaxation ◽  
Spatially Resolved ◽  
Exciton Transport

Spatially resolved photocarrier energy relaxation in low-doped bulk GaAs

2012 ◽  
Vol 86 (16) ◽  
Author(s):  
T. Kiessling ◽  
J.-H. Quast ◽  
A. Kreisel ◽  
T. Henn ◽  
W. Ossau ◽  
...  
Keyword(s):  
Energy Relaxation ◽  
Bulk Gaas ◽  
Spatially Resolved

Hot-electron energy relaxation rates in GaAs/GaAlAs quantum wells

1989 ◽  
Vol 4 (10) ◽  
pp. 852-857 ◽  
Author(s):  
N Balkan ◽  
B K Ridley ◽  
M Emeny ◽  
I Goodridge
Keyword(s):  
Quantum Wells ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Relaxation Rates

Growth Evolution of (Zn,Cd)Se Quantum Dots Deduced from Spatially Resolved Structural and Optical Characterization

1999 ◽  
Vol 571 ◽  
Author(s):  
K. Leonard ◽  
D. Hommel ◽  
A. Stockmann ◽  
H. Selke ◽  
J. Seufert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Direction ◽  
Growth Mode ◽  
Gradual Transition ◽  
Mode Transition ◽  
Spatially Resolved ◽  
Composition Fluctuations

ABSTRACTThe growth mode of CdSe layers grown by migration enhanced epitaxy between ZnSe barriers has been investigated. In situ reflection high-energy electron diffraction shows a gradual transition to a three-dimensional growth mode which, however, is not accompanied by a change of the surface lattice constant. High-resolution transmission electron micrographs reveal a strong Cd diffusion, leading to ternary ZnCdSe quantum wells. Furthermore. composition fluctuations perpendicular to the growth direction on a nanometer scale are found already prior to the beginning of the growth mode transition. In the case of heterostructures containing a CdSe layer that has undergone the growth mode transition, micrographs show Cd-rich quantum dots with diameters of around 8 nm and heights of around 1.5 nm within a ternary quantum well. By spatially resolved photoluminescence the emission from single quantum dots could be observed. The polarization dependence of the emission from single dots indicates an asymmetric shape of the dots with certain preferential orientations along the [110] and [110] directions.

scholarly journals Direct observation of a Γ−X energy spectrum transition in narrow AlAs quantum wells

2018 ◽  
Vol 97 (11) ◽  
Author(s):  
A. R. Khisameeva ◽  
A. V. Shchepetilnikov ◽  
V. M. Muravev ◽  
S. I. Gubarev ◽  
D. D. Frolov ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Quantum Wells ◽  
Direct Observation

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

2016 ◽  
Vol 25 (11) ◽  
pp. 117803 ◽  
Author(s):  
Haiyan Wu ◽  
Ziguang Ma ◽  
Yang Jiang ◽  
Lu Wang ◽  
Haojun Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Direct Observation ◽  
Transport Process ◽  
Carrier Transport ◽  
Pn Junction ◽  
Ingan Quantum Wells

Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures

2014 ◽  
Vol 1736 ◽  
Author(s):  
D.J. As ◽  
R. Kemper ◽  
C. Mietze ◽  
T. Wecker ◽  
J.K.N. Lindner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Film Thickness ◽  
Quantum Wells ◽  
Emission Intensity ◽  
Optical Emission ◽  
Quantum Well Structures ◽  
Spatially Resolved ◽  
Scanning Transmission ◽  
Cubic Gan

ABSTRACTIn this contribution we report on the optical properties of cubic AlN/GaN asymmetric multi quantum wells (MQW) structures on 3C-SiC/Si (001) substrates grown by radio-frequency plasma-assisted molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) and spatially resolved cathodoluminescence (CL) at room temperature and at low temperature are used to characterize the optical properties of the cubic AlN/GaN MQW structures. An increasing CL emission intensity with increasing film thickness due to the improved crystal quality was observed. This correlation can be directly connected to the reduction of the linewidth of x-ray rocking curves with increasing film thickness of the c-GaN films. Defects like stacking faults (SFs) on the {111} planes, which also can be considered as hexagonal inclusions in the cubic crystal matrix, lead to a decrease of the CL emission intensity. With low temperature CL line scans also monolayer fluctuations of the QWs have been detected and the observed transition energies agree well with solutions calculated using a one-dimensional (1D) Schrödinger-Poisson simulator.

Localization effects, energy relaxation, and electron and hole dispersion in selectively dopedn-typeAlyGa1−yAs/InxGa1−xAs/GaAs quantum wells

1990 ◽  
Vol 42 (15) ◽  
pp. 9472-9479 ◽  
Author(s):  
L. V. Butov ◽  
V. D. Kulakovskii ◽  
T. G. Andersson ◽  
Z. G. Chen
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation

Effects of nonequilibrium phonons on the energy relaxation and recombination lifetime of photogenerated carriers in undoped GaAs quantum wells

1988 ◽  
Vol 37 (15) ◽  
pp. 8923-8931 ◽  
Author(s):  
Kai Shum ◽  
M. R. Junnarkar ◽  
H. S. Chao ◽  
R. R. Alfano ◽  
H. Morkoç
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Recombination Lifetime ◽  
Undoped Gaas
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