High-mobility polymer gate dielectric pentacene thin film transistors

2002 ◽  
Vol 92 (9) ◽  
pp. 5259-5263 ◽  
Author(s):  
Hagen Klauk ◽  
Marcus Halik ◽  
Ute Zschieschang ◽  
Günter Schmid ◽  
Wolfgang Radlik ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects

2004 ◽  
Vol 85 (15) ◽  
pp. 3283-3285 ◽  
Author(s):  
Joonhyung Park ◽  
S. Young Park ◽  
Sang-Oak Shim ◽  
Hyewon Kang ◽  
Hong H. Lee
Keyword(s):  
Thin Film ◽  
Solvent Effects ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Polymer Thin Film

High-mobility pentacene thin-film transistors with copolymer-gate dielectric

2007 ◽  
Vol 38 (1) ◽  
pp. 27-30 ◽  
Author(s):  
Wei Wang ◽  
Jiawei Shi ◽  
Wenhai Jiang ◽  
Shuxu Guo ◽  
Hongmei Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility

Low-Temperature Deposition of Inorganic–Organic HfO2–PMMA Hybrid Gate Dielectric Layers for High-Mobility ZnO Thin-Film Transistors

2019 ◽  
Vol 1 (6) ◽  
pp. 1003-1011 ◽  
Author(s):  
Gouri Syamala Rao Mullapudi ◽  
Gonzalo Alonso Velazquez-Nevarez ◽  
Carlos Avila-Avendano ◽  
Jorge Alejandro Torres-Ochoa ◽  
Manuel Angel Quevedo-López ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Zno Thin Film ◽  
Dielectric Layers ◽  
Low Temperature Deposition ◽  
Temperature Deposition

scholarly journals Temperature Effects on a-IGZO Thin Film Transistors Using HfO2Gate Dielectric Material

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Yu-Hsien Lin ◽  
Jay-Chi Chou
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
High Mobility ◽  
Gate Oxide ◽  
Interface Roughness ◽  
Indium Gallium Zinc Oxide ◽  
Dielectric Thin Film

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2is an attractive candidate as a high-κdielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2gate dielectric TFT exhibiting high mobility, a highION/IOFFratio, lowIOFFcurrent, and excellent subthreshold swing (SS).

scholarly journals 1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

2021 ◽  
Vol 52 (S1) ◽  
pp. 7-7
Author(s):  
Weihua Wu ◽  
Yi Zhuo ◽  
Fangmei Liu ◽  
Yuanpeng Chen ◽  
Jiangbo Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Short Channel

Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

1996 ◽  
Vol 424 ◽  
Author(s):  
R. E. I. Schropp ◽  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
J. Holleman ◽  
H. Meiling
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Current Crowding ◽  
Hot Wire ◽  
Saturation Regime ◽  
Silicon Thin Film ◽  
Order Of Magnitude

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film
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