Analysis of low-frequency noise in boron-doped polycrystalline silicon–germanium resistors

2002 ◽  
Vol 81 (14) ◽  
pp. 2578-2580 ◽  
Author(s):  
Kun-Ming Chen ◽  
Guo-Wei Huang ◽  
D. Y. Chiu ◽  
Hsiang-Jen Huang ◽  
Chun-Yen Chang
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Boron Doped

Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors

1999 ◽  
Vol 46 (5) ◽  
pp. 968-974 ◽  
Author(s):  
C.T. Angelis ◽  
C.A. Dimitriadis ◽  
J. Brini ◽  
G. Kamarinos ◽  
V.K. Gueorguiev ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Spectroscopy

Low-frequency noise in gate overlapped lightly doped drain polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (22) ◽  
pp. 3268-3270 ◽  
Author(s):  
S. Giovannini ◽  
A. Bove ◽  
A. Valletta ◽  
L. Mariucci ◽  
A. Pecora ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film ◽  
Lightly Doped Drain

Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin film transistors

1998 ◽  
Vol 83 (3) ◽  
pp. 1469-1475 ◽  
Author(s):  
C. A. Dimitriadis ◽  
J. Brini ◽  
G. Kamarinos ◽  
V. K. Gueorguiev ◽  
Tz. E. Ivanov
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

scholarly journals Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

2015 ◽  
Vol 242 ◽  
pp. 449-458 ◽  
Author(s):  
Eddy Simoen ◽  
Bogdan Cretu ◽  
Wen Fang ◽  
Marc Aoulaiche ◽  
Jean Marc Routoure ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Time Constant ◽  
Polycrystalline Silicon ◽  
Deep Level ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Single Defect ◽  
Noise Spectroscopy

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.

Origin of low frequency noise in polycrystalline silicon thin-film transistors

2003 ◽  
Vol 427 (1-2) ◽  
pp. 113-116 ◽  
Author(s):  
Charalabos A. Dimitriadis ◽  
Jean Brini ◽  
George Kamarinos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film
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