Heat treatment effects on electrical and optical properties of ternary compound In2O3–ZnO films

2002 ◽  
Vol 92 (10) ◽  
pp. 5761-5765 ◽  
Author(s):  
Jung-Kyung Lee ◽  
Hwa-Min Kim ◽  
Seoung-Hwan Park ◽  
Jong-Jae Kim ◽  
Byung-Roh Rhee ◽  
...  
2011 ◽  
Vol 26 (12) ◽  
pp. 125016 ◽  
Author(s):  
Y H Xue ◽  
X D Zhang ◽  
Y Y Shen ◽  
D C Zhang ◽  
F Zhu ◽  
...  

2001 ◽  
Vol 692 ◽  
Author(s):  
K. S. Huh ◽  
D. K. Hwang ◽  
K. H. Bang ◽  
M. K. Hong ◽  
D. H. Lee ◽  
...  

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.


2016 ◽  
Vol 599 ◽  
pp. 19-26 ◽  
Author(s):  
S. Kuprenaite ◽  
A. Abrutis ◽  
V. Kubilius ◽  
T. Murauskas ◽  
Z. Saltyte ◽  
...  

2008 ◽  
Vol 53 (9(5)) ◽  
pp. 2947-2950 ◽  
Author(s):  
T. Muranaka ◽  
A. Nisii ◽  
T. Uehara ◽  
T. Sakano ◽  
Y. Nabetani ◽  
...  

2010 ◽  
Vol 60 (2) ◽  
pp. 218-222
Author(s):  
S.-B. SEO ◽  
K. BAE ◽  
H.-O. YOUN ◽  
M.-S. KIM ◽  
S.-H. PARK ◽  
...  

2009 ◽  
Vol 255 (9) ◽  
pp. 4913-4915 ◽  
Author(s):  
S.P. Wang ◽  
C.X. Shan ◽  
B. Yao ◽  
B.H. Li ◽  
J.Y. Zhang ◽  
...  

2001 ◽  
Vol 4 (6) ◽  
pp. 617-620 ◽  
Author(s):  
X.L. Xu ◽  
S.P. Lau ◽  
J.S. Chen ◽  
Z. Sun ◽  
B.K. Tay ◽  
...  

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