Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions

2002 ◽  
Vol 92 (8) ◽  
pp. 4791-4795 ◽  
Author(s):  
F. Ma ◽  
S. Wang ◽  
X. Li ◽  
K. A. Anselm ◽  
X. G. Zheng ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Avalanche Photodiodes ◽  
Low Noise

Monte Carlo Simulation of InAlAs/InAlGaAs Tandem Avalanche Photodiodes

2012 ◽  
Vol 48 (4) ◽  
pp. 528-532 ◽  
Author(s):  
Wenlu Sun ◽  
Xiaoguang Zheng ◽  
Zhiwen Lu ◽  
Joe C. Campbell
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Avalanche Photodiodes

scholarly journals Low-noise Monte Carlo simulation of the variable hard sphere gas

2011 ◽  
Vol 23 (3) ◽  
pp. 030606 ◽  
Author(s):  
Gregg A. Radtke ◽  
Nicolas G. Hadjiconstantinou ◽  
Wolfgang Wagner
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Hard Sphere ◽  
Low Noise

Monte Carlo Simulation of ${\rm Al}_{x}{\rm Ga}_{1-{x}}{\rm As}~(x\geq 0.6)$ Avalanche Photodiodes

2011 ◽  
Vol 47 (12) ◽  
pp. 1531-1536 ◽  
Author(s):  
Wenlu Sun ◽  
Xiaoguang Zheng ◽  
Zhiwen Lu ◽  
Joe C. Campbell
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Avalanche Photodiodes

Monte Carlo simulation of avalanche noise characteristics of type II InAs/GaSb superlattice avalanche photodiodes

2019 ◽  
Vol 301 ◽  
pp. 113699
Author(s):  
Chengcheng Zhao ◽  
Jianliang Huang ◽  
Yanhua Zhang ◽  
Wenjun Huang ◽  
Biyin Nie ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Avalanche Photodiodes ◽  
Type Ii ◽  
Noise Characteristics

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Sign in / Sign up

Export Citation Format

Share Document