Examination of band bending at buckminsterfullerene (C60)/metal interfaces by the Kelvin probe method

2002 ◽  
Vol 92 (7) ◽  
pp. 3784-3793 ◽  
Author(s):  
N. Hayashi ◽  
H. Ishii ◽  
Y. Ouchi ◽  
K. Seki
Keyword(s):  
Probe Method ◽  
Kelvin Probe ◽  
Band Bending ◽  
Metal Interfaces ◽  
Kelvin Probe Method ◽  
Buckminsterfullerene C60

Examination of band bending at C60/metal interfaces by the Kelvin probe method

2003 ◽  
Vol 137 (1-3) ◽  
pp. 1377-1378 ◽  
Author(s):  
N. Hayashi ◽  
H. Ishii ◽  
Y. Ouchi ◽  
K. Seki
Keyword(s):  
Probe Method ◽  
Kelvin Probe ◽  
Band Bending ◽  
Metal Interfaces ◽  
Kelvin Probe Method

Energy level alignment and band bending at TPD/metal interfaces studied by Kelvin probe method

2001 ◽  
Vol 121 (1-3) ◽  
pp. 1717-1718 ◽  
Author(s):  
N. Hayashi ◽  
E. Ito ◽  
H. Ishii ◽  
Y. Ouchi ◽  
K. Seki
Keyword(s):  
Energy Level ◽  
Probe Method ◽  
Kelvin Probe ◽  
Band Bending ◽  
Energy Level Alignment ◽  
Metal Interfaces ◽  
Kelvin Probe Method

Electronic structures of TPD/metal interfaces studied by photoemission and Kelvin probe method

2001 ◽  
Vol 175-176 ◽  
pp. 407-411 ◽  
Author(s):  
Eisuke Ito ◽  
Hiroshi Oji ◽  
Naoki Hayashi ◽  
Hisao Ishii ◽  
Yukio Ouchi ◽  
...  
Keyword(s):  
Electronic Structures ◽  
Probe Method ◽  
Kelvin Probe ◽  
Metal Interfaces ◽  
Kelvin Probe Method

Electronic Structure of Organic/Metal Interfaces Studied by UPS and Kelvin Probe

1999 ◽  
Vol 582 ◽  
Author(s):  
Kazuhiko Seki ◽  
Hiroshi Oji ◽  
Eisuke Ito ◽  
Daisuke Yoshimura ◽  
Naoki Hayashi ◽  
...  
Keyword(s):  
Organic Solar Cells ◽  
Photoemission Spectroscopy ◽  
Organic Layer ◽  
Organic Metal ◽  
Kelvin Probe ◽  
Band Bending ◽  
Light Emitting ◽  
Organic Devices ◽  
Metal Interfaces ◽  
Kelvin Probe Method

ABSTRACTThe interfaces of organic materials with other solids play important roles in the function of various organic devices such as organic light-emitting diodes (OLEDs), spectral sensitization in photography, organic solar cells, and electrophotography. Also they should be important in future molecular devices, both in the central part of the device and at the connection with outside circuits. However, serious experimental examination of such interfaces has started only recently. In this talk we focus our attention on the organic/metal interfaces, and summarize our understanding about (1) the energy level alignment right at the interface, and (2) possible band bending within an organic layer, mainly using the techniques of UV photoemission spectroscopy (UPS) and Kelvin probe method. As for (1), the formation of electric dipole layer was observed in most organic/metal interfaces, and its origin is discussed. As for (2), recent examination of the existence/absence of band bending in ultrahigh vacuum will be reported. It is also pointed out that there can be much effects of (i) atmosphere at sample preparation and measurements, and (2) chemistry and interdiffusion at the interface.

FORMATION OF SURFACE DIPOLES FOR SMALL PALLADIUM CLUSTERS DEPOSITED ON α-(0001)Al2O3

1996 ◽  
Vol 03 (01) ◽  
pp. 973-977 ◽  
Author(s):  
S. OGAWA ◽  
S. ICHIKAWA
Keyword(s):  
Charge Transfer ◽  
Single Crystal ◽  
Work Function ◽  
Probe Method ◽  
Kelvin Probe ◽  
Electronic Interactions ◽  
Palladium Clusters ◽  
Metal Support ◽  
Pd Clusters ◽  
Kelvin Probe Method

The Kelvin-probe method is utilized to measure the work function of a single-crystal aluminum covered with palladium clusters. It is found that formation of interface dipoles occurs by charge transfer from Al 2 O 3 to Pd clusters, particularly for those less than 2 nm in diameter. These results provide valuable clue to the understanding of metal-support electronic interactions, which is important in catalysis.

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding

2012 ◽  
Vol 717-720 ◽  
pp. 275-278
Author(s):  
János Mizsei ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
Jana Toompuu ◽  
Toomas Rang
Keyword(s):  
Experimental Study ◽  
Silicon Carbide ◽  
Crystal Lattice ◽  
Surface States ◽  
Deep Levels ◽  
Probe Method ◽  
Diffusion Welding ◽  
Kelvin Probe ◽  
Kelvin Probe Method

This paper is a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the Kelvin Probe method has shown an increase in the density of surface states after the diffusion welding from 2x1015 cm-2 to 3.5x1016 cm-2.

Contact Potential Difference as a Non-Destructive Testing of Steel

2021 ◽  
Vol 316 ◽  
pp. 258-263
Author(s):  
L.P. Aref'eva ◽  
A.G. Sukijazov ◽  
Yu.V. Dolgachev
Keyword(s):  
Chemical Composition ◽  
Contact Potential Difference ◽  
Electron Work Function ◽  
Sharp Decrease ◽  
Sample Surface ◽  
Probe Method ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Kelvin Probe Method

For steels of different grades, the effect of the chemical composition, structure, and surface etching on the contact potential difference is studied using the Kelvin probe method. It was shown experimentally that, with a change in the structure and chemical composition, the contact potential difference changes. Etching the surface of the steel with a 4% solution of nitric acid leads to a sharp decrease in the magnitude of the contact potential difference, which allows us to conclude that the value of the electron work function from the sample surface increases. The ability to control the composition and structure of the material by the Kelvin probe method is shown.

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