Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

2002 ◽  
Vol 81 (8) ◽  
pp. 1456-1458 ◽  
Author(s):  
M. J. Manfra ◽  
N. G. Weimann ◽  
J. W. P. Hsu ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Morphology Control ◽  
Sapphire Substrates

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Latigt ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Stark Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Confined Stark Effect ◽  
Sapphire Substrates ◽  
Gan Buffer Layer ◽  
Large Quantum

AbstractAIGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

Microstructral Investigations on GaN Films Grown by Laser Induced Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
H. Zhou ◽  
F. Phillipp ◽  
M. Gross ◽  
H. Schröder
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Threading Dislocations ◽  
Planar Defects ◽  
Sapphire Substrates ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Line Defects ◽  
Inversion Domain Boundaries

AbstractMicrostructural investigations on GaN films grown on SiC and sapphire substrates by laser induced molecular beam epitaxy have been performed. Threading dislocations with Burgers vectors of 1/3<1120>, 1/3<1123> and [0001] are typical line defects, predominantly the first type of dislocations. Their densities are typically 1.5×1010 cm−2 and 4×109 cm−2 on SiC and sapphire, respectively. Additionally, planar defects characterized as inversion domain boundaries lying on {1100} planes have been observed in GaN/sapphire samples with an inversion domain density of 4×109 cm−2. The inversion domains are of Ga-polarity with respect to the N-polarity of the adjacent matrix. However, GaN layers grown on SiC show Ga-polarity. Possible reasons for the different morphologies and structures of the films grown on different substrates are discussed. Based on an analysis of displacement fringes of inversion domains, an atomic model of the IDB-II with Ga-N bonds across the boundary was deduced. High resolution transmission electron microscopy (HRTEM) observations and the corresponding simulations confirmed the IDB-II structure determined by the analysis of displacement fringes.

scholarly journals Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

2002 ◽  
Vol 80 (2) ◽  
pp. 216-218 ◽  
Author(s):  
D. Huang ◽  
M. A. Reshchikov ◽  
F. Yun ◽  
T. King ◽  
A. A. Baski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Sapphire Substrates

scholarly journals Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 962-967
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Laügt ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Stark Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Confined Stark Effect ◽  
Sapphire Substrates ◽  
Gan Buffer Layer ◽  
Large Quantum

AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

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