From amplified spontaneous emission to microring lasing using nanocrystal quantum dot solids

2002 ◽  
Vol 81 (7) ◽  
pp. 1303-1305 ◽  
Author(s):  
A. V. Malko ◽  
A. A. Mikhailovsky ◽  
M. A. Petruska ◽  
J. A. Hollingsworth ◽  
H. Htoon ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spontaneous Emission ◽  
Amplified Spontaneous Emission

Ultrastable CsPbBr 3 Perovskite Quantum Dot and Their Enhanced Amplified Spontaneous Emission by Surface Ligand Modification

Small ◽  
2019 ◽  
pp. 1901173 ◽  
Author(s):  
Dongdong Yan ◽  
Tongchao Shi ◽  
Zhigang Zang ◽  
Tingwei Zhou ◽  
Zhengzheng Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Ligand Modification ◽  
Surface Ligand

Amplified spontaneous emission and random lasing using CsPbBr3 quantum dot glass through controlling crystallization

2020 ◽  
Vol 56 (19) ◽  
pp. 2853-2856 ◽  
Author(s):  
Huiling Zhang ◽  
Lin Yuan ◽  
Ya Chen ◽  
Yaqian Zhang ◽  
Yanxia Yu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Random Lasing ◽  
Heat Treated ◽  
Different Temperatures

CsPbBr3 QD glasses heat-treated at different temperatures have different sizes of QDs and lasing properties.

Room-temperature amplified spontaneous emission at 1300 nm in solution-processed PbS quantum-dot films

2005 ◽  
Vol 30 (2) ◽  
pp. 171 ◽  
Author(s):  
V. Sukhovatkin ◽  
S. Musikhin ◽  
I. Gorelikov ◽  
S. Cauchi ◽  
L. Bakueva ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spontaneous Emission ◽  
Room Temperature ◽  
Amplified Spontaneous Emission ◽  
Solution Processed ◽  
Pbs Quantum Dot

scholarly journals Reducing Amplified Spontaneous Emission Threshold in CsPbBr3 Quantum Dot Films by Controlling TiO2 Compact Layer

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1605 ◽  
Author(s):  
Saif M. H. Qaid ◽  
Fahhad H. Alharbi ◽  
Idriss Bedja ◽  
Mohammad Khaja Nazeeruddin ◽  
Abdullah S. Aldwayyan
Keyword(s):  
Quantum Dot ◽  
Spontaneous Emission ◽  
Precursor Solution ◽  
Atomic Layer ◽  
Amplified Spontaneous Emission ◽  
High Quality ◽  
Compact Layer ◽  
Layer Deposition ◽  
Growth Method ◽  
Emission Threshold

Amplified spontaneous emission (ASE) threshold in CsPbBr3 quantum dot films is systematically reduced by introducing high quality TiO2 compact layer grown by atomic-layer deposition. Uniform and pinhole-free TiO2 films of thickness 10, 20 and 50 nm are used as a substrates for CsPbBr3 quantum dot films to enhance amplified spontaneous emission performance. The reduction is attributed indirectly to the improved morphology of TiO2 compact layer and subsequently CsPbBr3 active layer as grown on better quality substrates. This is quantified by the reduced roughness of the obtained films to less than 5 nm with 50 nm TiO2 substrate. Considering the used growth method for the quantum dot film, the improved substrate morphology maintains better the structure of the used quantum dots in the precursor solution. This results in better absorption and hence lower threshold of ASE. Besides that, the improved film quality results further in reducing light scattering and hence additional slight optical enhancement. The work demonstrates a potential venue to reduce the amplified spontaneous emission threshold of quantum dot films and therefore enhanced their optical performance.

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