Structural characterization of a porous low-dielectric-constant thin film with a non-uniform depth profile

2002 ◽  
Vol 81 (4) ◽  
pp. 607-609 ◽  
Author(s):  
Eric K. Lin ◽  
Hae-Jeong Lee ◽  
Gary W. Lynn ◽  
Wen-li Wu ◽  
Mark L. O’Neill
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Depth Profile ◽  
Structural Characterization ◽  
Low Dielectric Constant ◽  
Low Dielectric

Characterization of Pore Structure in a Nanoporous Low-Dielectric-Constant Thin Film by Neutron Porosimetry and X-ray Porosimetry

Langmuir ◽  
2004 ◽  
Vol 20 (16) ◽  
pp. 6658-6667 ◽  
Author(s):  
Ronald C. Hedden ◽  
Hae-Jeong Lee ◽  
Christopher L. Soles ◽  
Barry J. Bauer
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Low Dielectric Constant ◽  
X Ray ◽  
Low Dielectric

Characterization of low dielectric constant polyaniline thin film synthesized by ac plasma polymerization technique

2002 ◽  
Vol 35 (3) ◽  
pp. 240-245 ◽  
Author(s):  
C Joseph Mathai ◽  
S Saravanan ◽  
M R Anantharaman ◽  
S Venkitachalam ◽  
S Jayalekshmi
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Plasma Polymerization ◽  
Low Dielectric Constant ◽  
Low Dielectric

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Si Substrate ◽  
Capacitance Density ◽  
Low Dielectric ◽  
Pulsed Dc ◽  
High Dielectric ◽  
Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

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