Effect of electrical boundary conditions on ferroelectric domain structures in thin films

2002 ◽  
Vol 81 (3) ◽  
pp. 427-429 ◽  
Author(s):  
Y. L. Li ◽  
S. Y. Hu ◽  
Z. K. Liu ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Boundary Conditions ◽  
Ferroelectric Domain ◽  
Domain Structures ◽  
Electrical Boundary Conditions

Computer simulation of ferroelectric domain structures in epitaxial BiFeO3 thin films

2008 ◽  
Vol 103 (9) ◽  
pp. 094111 ◽  
Author(s):  
J. X. Zhang ◽  
Y. L. Li ◽  
S. Choudhury ◽  
L. Q. Chen ◽  
Y. H. Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Ferroelectric Domain ◽  
Domain Structures ◽  
Bifeo3 Thin Films

Compositional Control of Ferroelectric Domain Structures in Eteroepitaxial PLZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
K. S. Lee ◽  
Y. M. Kang ◽  
S. Baik
Keyword(s):  
Thin Films ◽  
Transformation Strain ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Domain ◽  
Ex Situ ◽  
Cubic Phase ◽  
Domain Formation ◽  
Axis Orientation ◽  
Domain Structures ◽  
Plzt Thin Films

ABSTRACTThe mechanism and control of ferroelectric domain formation in heteroepitaxial (Pb1−xLax)(ZryTi1-y)O3 (PLZT) thin films grown on MgO(001) substrates have been investigated as a function of composition and temperature. Pulsed laser deposition and RF magnetron sputtering techniques were used and optimized to fabricate epitaxial thin films with varying La and/or Zr concentrations. Periodic 9° domain structures were developed when the film transformed from the cubic phase to the tetragonal phase during cooling after deposition. As a result of the tetragonality of the films, the domain formation induced slightly tilted twin structures. All films were grown highly c axis oriented and the degree of c axis orientation was improved with increasing La or Zr concentration. Experimental observations of the 90° domain evolution in films have been carried out in-situ and ex-situ using conventional and synchrotron X-ray diffraction and demonstrated that the most important parameter affecting the domain structure and its abundance is the transformation strain at the Curie temperature, which can be varied systematically by changing the concentration of La and/or Zr in the PLZT system.

Ferroelectric Domain Structures in Epitaxial PZT Thin Films: A Review

2002 ◽  
Vol 46 (1) ◽  
pp. 307-328 ◽  
Author(s):  
Kilho Lee ◽  
Kyeong Seok Lee ◽  
Yong Kwan Kim ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Ferroelectric Domain ◽  
Pzt Thin Films ◽  
Domain Structures

Direct-Write E-beam Submicron Domain Engineering in LiNbO3 Thin Films Grown by Liquid Phase Epitaxy

2003 ◽  
Vol 784 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Liquid Phase ◽  
Domain Structure ◽  
Liquid Phase Epitaxy ◽  
Ferroelectric Domain ◽  
Domain Engineering ◽  
Direct Write ◽  
Composition Effects ◽  
Domain Structures

ABSTRACTWe demonstrate submicron ferroelectric domain engineering in liquid phase epitaxy (LPE) LiNbO3 thin films grown on LiNbO3 and LiTaO3 substrates using a direct-write electron beam poling for waveguide applications. LiNbO3 thin films of several-micron thickness were grown using a flux melt of 20 mol% LiNbO3-80 mol% LiVO3. To engineer domain structures in Z- oriented LPE LiNbO3 films, a direct-write electron beam poling was implemented. It is shown that we can engineer the domain structure of LPE LiNbO3 films by using direct e-beam poling, even though the domain orientations of the film and the substrate are opposite. We also compared e-beam poling behavior in a congruent LiNbO3 single crystal and a LPE LiNbO3 film. Using the same e-beam scan parameters, a much enhanced domain structure is obtained in LPE films. Defect structure and composition effects are also discussed.

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