Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal–oxide–semiconductor devices

2002 ◽  
Vol 92 (4) ◽  
pp. 2198-2201 ◽  
Author(s):  
Henryk M. Przewlocki ◽  
Hisham Z. Massoud
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Contact Potential Difference ◽  
Metal Oxide Semiconductor ◽  
Potential Difference ◽  
Oxide Semiconductor ◽  
Contact Potential ◽  
Effective Contact ◽  
Effects Of Stress

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

1996 ◽  
Vol 80 (3) ◽  
pp. 1578-1582 ◽  
Author(s):  
H. Kobayashi ◽  
K. Namba ◽  
Y. Yamashita ◽  
Y. Nakato ◽  
T. Komeda ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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