Electrostatic force microscopy using a quartz tuning fork

2002 ◽  
Vol 80 (23) ◽  
pp. 4324-4326 ◽  
Author(s):  
Yongho Seo ◽  
Wonho Jhe ◽  
Cheol Seong Hwang
Keyword(s):  
Tuning Fork ◽  
Electrostatic Force ◽  
Quartz Tuning Fork ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy

scholarly journals Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

2019 ◽  
Vol 10 ◽  
pp. 617-633 ◽  
Author(s):  
Aaron Mascaro ◽  
Yoichi Miyahara ◽  
Tyler Enright ◽  
Omur E Dagdeviren ◽  
Peter Grütter
Keyword(s):  
Atomic Force Microscopy ◽  
Electrostatic Force ◽  
Oscillation Period ◽  
Electrostatic Force Microscopy ◽  
Time Varying ◽  
Time Resolved ◽  
Battery Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Techniques

Recently, there have been a number of variations of electrostatic force microscopy (EFM) that allow for the measurement of time-varying forces arising from phenomena such as ion transport in battery materials or charge separation in photovoltaic systems. These forces reveal information about dynamic processes happening over nanometer length scales due to the nanometer-sized probe tips used in atomic force microscopy. Here, we review in detail several time-resolved EFM techniques based on non-contact atomic force microscopy, elaborating on their specific limitations and challenges. We also introduce a new experimental technique that can resolve time-varying signals well below the oscillation period of the cantilever and compare and contrast it with those previously established.

scholarly journals Broadband nanodielectric spectroscopy by means of amplitude modulation electrostatic force microscopy (AM-EFM)

2011 ◽  
Vol 111 (8) ◽  
pp. 1366-1369 ◽  
Author(s):  
G.A. Schwartz ◽  
C. Riedel ◽  
R. Arinero ◽  
Ph. Tordjeman ◽  
A. Alegría ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy

Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Electrostatic Force Microscopy.

2013 ◽  
Vol 1493 ◽  
pp. 201-206
Author(s):  
Rubana Bahar Priti ◽  
Venkat Bommisetty
Keyword(s):  
Grain Boundaries ◽  
Charge Distribution ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Nanocrystalline Silicon ◽  
Electrostatic Force Microscopy ◽  
Strained Si ◽  
Force Microscopy ◽  
Local Charge ◽  
Before And After

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) is a promising absorber material for photovoltaic applications. Nanoscale electrical conductivity and overall electronic quality of this material are significantly affected by film microstructure, specifically the density and dimension of grains and grain-boundaries (GB). Local charge distribution at grains and grain/GB interfaces of nc-Si:H was studied by Electrostatic Force Microscopy (EFM) in constant force mode under illumination of white LED. Bias voltage from -3V to +3V was applied on the tip. Scanning Kelvin Force (KFM) images were taken before and after illumination to study the change in surface photovoltage (SP). EFM and KFM analysis were combined with film topography to draw a correlation between surface morphology and nanoscale charge distribution in this material. After illumination, small blister like structures were observed whose size and density increase with time. Raman spectroscopy confirmed these new structures as nanocrystalline silicon. This change was assumed due to relaxation of strained Si-Si bonds as an effect of photo response. Nanocrystalline grain interiors were at lower potential and amorphous grain boundaries were at higher potential for negative bias; it was opposite for positive bias. Change in polarity in bias voltage reversed the polarity of the potential in grains and GBs indicating the dominance of negative type of defects. Further study with current sensing AFM in dark and illumination with variable bias voltages will be able to identify the type and density of defects in grains and grain/GB interfaces.

scholarly journals Simultaneous current, force and dissipation measurements on the Si(111) 7×7 surface with an optimized qPlus AFM/STM technique

2012 ◽  
Vol 3 ◽  
pp. 249-259 ◽  
Author(s):  
Zsolt Majzik ◽  
Martin Setvín ◽  
Andreas Bettac ◽  
Albrecht Feltz ◽  
Vladimír Cháb ◽  
...  
Keyword(s):  
Cross Talk ◽  
Tuning Fork ◽  
Tunneling Current ◽  
Quartz Tuning Fork ◽  
Scanning Tunneling ◽  
Experimental Setup ◽  
Force Microscopy ◽  
Atomic Force ◽  
Force Signal ◽  
Reported Data

We present the results of simultaneous scanning-tunneling and frequency-modulated dynamic atomic force microscopy measurements with a qPlus setup. The qPlus sensor is a purely electrical sensor based on a quartz tuning fork. If both the tunneling current and the force signal are to be measured at the tip, a cross-talk of the tunneling current with the force signal can easily occur. The origin and general features of the capacitive cross-talk will be discussed in detail in this contribution. Furthermore, we describe an experimental setup that improves the level of decoupling between the tunneling-current and the deflection signal. The efficiency of this experimental setup is demonstrated through topography and site-specific force/tunneling-spectroscopy measurements on the Si(111) 7×7 surface. The results show an excellent agreement with previously reported data measured by optical interferometric deflection.

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