Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field

2002 ◽  
Vol 80 (23) ◽  
pp. 4390-4392 ◽  
Author(s):  
Masaya Ichimura ◽  
Atsushi Tada ◽  
Eisuke Arai ◽  
Hiroyuki Takamatsu ◽  
Shingo Sumie
Keyword(s):  
Electric Field ◽  
Carrier Lifetime ◽  
External Surface ◽  
Lifetime Measurement ◽  
Bulk Carrier ◽  
Photoconductivity Decay ◽  
Surface Electric Field

Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method

2007 ◽  
Vol 46 (1) ◽  
pp. 35-39 ◽  
Author(s):  
Hideki Watanabe ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Masakazu Kanechika ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Lifetime Measurement ◽  
Excess Carrier ◽  
Photoconductivity Decay

The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement

2006 ◽  
Vol 21 (6) ◽  
pp. 771-774 ◽  
Author(s):  
Yanqiu Lv ◽  
Nili Wang ◽  
Chunquan Zhuang ◽  
Ping Li ◽  
Bing Han ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Lifetime Measurement ◽  
Photoconductivity Decay

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Lifting of the Spin Degeneracy of Hole Subbands in a Surface Electric Field on Silicon

1984 ◽  
Vol 53 (5) ◽  
pp. 493-496 ◽  
Author(s):  
A. D. Wieck ◽  
E. Batke ◽  
D. Heitmann ◽  
J. P. Kotthaus ◽  
E. Bangert
Keyword(s):  
Electric Field ◽  
Spin Degeneracy ◽  
Surface Electric Field

Characterization of Si wafers by μ-PCD with surface electric field

2000 ◽  
Vol 73 (1-3) ◽  
pp. 230-234 ◽  
Author(s):  
M Ichimura ◽  
M Hirano ◽  
A Tada ◽  
E Arai ◽  
H Takamatsu ◽  
...  
Keyword(s):  
Electric Field ◽  
Surface Electric Field
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