Role of As precipitates on ultrafast electron trapping in low-temperature-grown GaAs and AlGaAs alloys

2002 ◽  
Vol 91 (12) ◽  
pp. 9863 ◽  
Author(s):  
P. A. Loukakos ◽  
C. Kalpouzos ◽  
I. E. Perakis ◽  
Z. Hatzopoulos ◽  
M. Sfendourakis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electron Trapping ◽  
Low Temperature Grown Gaas

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

Role of excess As in low-temperature-grown GaAs

1992 ◽  
Vol 46 (8) ◽  
pp. 4617-4620 ◽  
Author(s):  
A. C. Warren ◽  
J. M. Woodall ◽  
P. D. Kirchner ◽  
X. Yin ◽  
F. Pollak ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Grown Gaas

Role of many-body effects in the coherent dynamics of excitons in low-temperature-grown GaAs

2015 ◽  
Vol 107 (14) ◽  
pp. 142108 ◽  
Author(s):  
D. Webber ◽  
L. Hacquebard ◽  
X. Liu ◽  
M. Dobrowolska ◽  
J. K. Furdyna ◽  
...  
Keyword(s):  
Low Temperature ◽  
Many Body ◽  
Coherent Dynamics ◽  
Many Body Effects ◽  
Low Temperature Grown Gaas

The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs

1996 ◽  
Vol 69 (10) ◽  
pp. 1465-1467 ◽  
Author(s):  
A. J. Lochtefeld ◽  
M. R. Melloch ◽  
J. C. P. Chang ◽  
E. S. Harmon
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Carrier Trapping ◽  
Low Temperature Grown Gaas

Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching

1999 ◽  
Vol 75 (19) ◽  
pp. 3032-3034 ◽  
Author(s):  
M. N. Chang ◽  
C. C. Chuo ◽  
C. M. Lu ◽  
K. C. Hsieh ◽  
N. T. Yeh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Low Temperature Grown Gaas
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