Resonant Raman scattering measurements of strains in ZnS epilayers grown on GaP

2002 ◽  
Vol 91 (11) ◽  
pp. 9429-9431 ◽  
Author(s):  
Young-Moon Yu ◽  
M.-H. Hyun ◽  
S. Nam ◽  
D. Lee ◽  
Byungsung O ◽  
...  
1989 ◽  
Vol 173 ◽  
Author(s):  
C. Botta ◽  
S. Luzzati ◽  
A. Bolognesi ◽  
M. Catellani ◽  
S. Destri ◽  
...  

ABSTRACTWe report Raman scattering measurements on poly-3-heptylthiophene and poly-3-undecylthiophenes both on resonance and preresonance conditions. We have studied different samples as solutions ,solution cast films and electrosynthetized as grown films. Our results indicate that the vibrational frequency of the mode which is strongly coupled to the π - π* electronic transition is sensible to “small” torsions between thiophenes rings , which do not necessarly interrupt completely the conjugation path.


1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR

2001 ◽  
Vol 47 (1-2) ◽  
pp. 50-54 ◽  
Author(s):  
Yan Wang ◽  
Ruifeng Yue ◽  
Hexiang Han ◽  
Xianbo Liao ◽  
Yongqian Wang ◽  
...  

1975 ◽  
Vol 70 (1) ◽  
pp. 173-180 ◽  
Author(s):  
C. Razzetti ◽  
M. P. Fontana

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