CF3I on a silicon surface: Adsorption, temperature-programmed desorption, and electron-stimulated desorption

2002 ◽  
Vol 116 (23) ◽  
pp. 10402-10410 ◽  
Author(s):  
Jason E. Sanabia ◽  
John H. Moore ◽  
John A. Tossell
Keyword(s):  
Silicon Surface ◽  
Surface Adsorption ◽  
Temperature Programmed Desorption ◽  
Adsorption Temperature ◽  
Temperature Programmed ◽  
Electron Stimulated Desorption

Electron Stimulated Desorption of Deuterium from GaN (0001) Surface

2002 ◽  
Vol 743 ◽  
Author(s):  
Y. Yang ◽  
J. Lee ◽  
B. D. Thoms
Keyword(s):  
Temperature Programmed Desorption ◽  
Desorption Peak ◽  
First Order ◽  
Desorption Temperature ◽  
Temperature Programmed ◽  
Electron Stimulated Desorption

AbstractTemperature programmed desorption (TPD) was performed on deuterated GaN(0001) surfaces which had been exposed to various doses of 90-eV electrons. TPD of the deuterated surface without electron exposure shows a broad D2 desorption feature with a peak desorption temperature at ∼400 °C. Electron exposure results in a decrease in intensity of the desorption peak which is attributed to removal of surface deuterium by electron stimulated desorption (ESD). This removal of deuterium by ESD produces no change in the peak desorption temperature indicating that recombinative desorption is first order in deuterium coverage.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

scholarly journals Nanosheet-Like Ho2O3 and Sr-Ho2O3 Catalysts for Oxidative Coupling of Methane

Catalysts ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 388
Author(s):  
Yuqiao Fan ◽  
Changxi Miao ◽  
Yinghong Yue ◽  
Weiming Hua ◽  
Zi Gao
Keyword(s):  
Oxidative Coupling ◽  
Temperature Programmed Desorption ◽  
Oxidative Coupling Of Methane ◽  
Molar Ratio ◽  
Impregnation Method ◽  
Oxygen Species ◽  
N2 Adsorption ◽  
Basic Sites ◽  
Chemisorbed Oxygen ◽  
Temperature Programmed

In this work, Ho2O3 nanosheets were synthesized by a hydrothermal method. A series of Sr-modified Ho2O3 nanosheets (Sr-Ho2O3-NS) with a Sr/Ho molar ratio between 0.02 and 0.06 were prepared via an impregnation method. These catalysts were characterized by several techniques such as XRD, N2 adsorption, SEM, TEM, XPS, O2-TPD (temperature-programmed desorption), and CO2-TPD, and they were studied with respect to their performances in the oxidative coupling of methane (OCM). In contrast to Ho2O3 nanoparticles, Ho2O3 nanosheets display greater CH4 conversion and C2-C3 selectivity, which could be related to the preferentially exposed (222) facet on the surface of the latter catalyst. The incorporation of small amounts of Sr into Ho2O3 nanosheets leads to a higher ratio of (O− + O2−)/O2− as well as an enhanced amount of chemisorbed oxygen species and moderate basic sites, which in turn improves the OCM performance. The optimal catalytic behavior is achievable on the 0.04Sr-Ho2O3-NS catalyst with a Sr/Ho molar ratio of 0.04, which gives a 24.0% conversion of CH4 with 56.7% selectivity to C2-C3 at 650 °C. The C2-C3 yield is well correlated with the amount of moderate basic sites present on the catalysts.

scholarly journals The interaction of size-selected Ru3 clusters with RF-deposited TiO2: probing Ru-CO binding sites with CO-Temperature Programmed Desorption

2021 ◽  
Author(s):  
Liam Howard-Fabretto ◽  
Timothy Gorey ◽  
Guangjing Li ◽  
Siriluck Tesana ◽  
Gregory F Metha ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Chemical Reactions ◽  
Binding Sites ◽  
Co Hydrogenation ◽  
Temperature Programmed Desorption ◽  
Temperature Programmed

Small Ru clusters are efficient catalysts for chemical reactions such as CO hydrogenation. In this study 3-atom Ru3 clusters were deposited onto radio frequency (RF)-deposited TiO2 which is an inexpensive,...

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