Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements

2002 ◽  
Vol 80 (17) ◽  
pp. 3132-3134 ◽  
Author(s):  
L. J. Cui ◽  
Y. P. Zeng ◽  
B. Q. Wang ◽  
Z. P. Zhu ◽  
L. Y. Lin ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Spin Splitting ◽  
Zero Field ◽  
High Electron ◽  
High Electron Mobility ◽  
Gaas Substrates

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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