scholarly journals Self-consistent scattering theory of transport and output characteristics of quantum cascade lasers

2002 ◽  
Vol 91 (11) ◽  
pp. 9019-9026 ◽  
Author(s):  
D. Indjin ◽  
P. Harrison ◽  
R. W. Kelsall ◽  
Z. Ikonić
Keyword(s):  
Scattering Theory ◽  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
Self Consistent ◽  
Output Characteristics ◽  
Cascade Lasers

GaAs/AlGaAs Quantum Cascade Lasers Based on Double Resonant Electron – LO Phonon Transitions

2005 ◽  
Vol 494 ◽  
pp. 25-30 ◽  
Author(s):  
A. Mirčetić ◽  
D. Indjin ◽  
V. Milanović ◽  
P. Harrison ◽  
Z. Ikonić ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Quantum Cascade Lasers ◽  
Longitudinal Optical ◽  
Equation Model ◽  
Longitudinal Optical Phonon ◽  
Quantum Cascade ◽  
Resonant Electron ◽  
Efficient Extraction ◽  
Output Characteristics ◽  
Cascade Lasers

In this paper a procedure for the global optimization of mid-infrared GaAs/AlGaAs quantum cascade lasers that relies on the method of simulated annealing is presented. We propose a double longitudinal optical phonon resonance design obtained via a ladder of three states, with subsequent pairs separated by optical phonon energy. Addition of an extra level decreases the lower laser level population by enabling an efficient extraction into the injector region. The output characteristics of the optimized structures are calculated using the full self–consistent rate equation model, which includes all of the relevant scattering mechanisms. We also presented the experimentally measured output characteristics of an initial device, which are in agreement with the numerically calculated values, confirming the good design capabilities of the applied procedure.

scholarly journals Self-consistent theory of the gain linewidth for quantum-cascade lasers

2005 ◽  
Vol 86 (4) ◽  
pp. 041108 ◽  
Author(s):  
F. Banit ◽  
S.-C. Lee ◽  
A. Knorr ◽  
A. Wacker
Keyword(s):  
Quantum Cascade Lasers ◽  
Consistent Theory ◽  
Quantum Cascade ◽  
Self Consistent ◽  
Cascade Lasers

scholarly journals Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 305 ◽  
Author(s):  
Maxim A. Ladugin ◽  
Irina V. Yarotskaya ◽  
Timur A. Bagaev ◽  
Konstantin Yu. Telegin ◽  
Andrey Yu. Andreev ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Quantum Cascade ◽  
Ultrathin Layers ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Short Period ◽  
Output Characteristics ◽  
Cascade Lasers ◽  
High Repeatability

AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500–2000 layers.

Sign in / Sign up

Export Citation Format

Share Document