Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures

2002 ◽  
Vol 80 (16) ◽  
pp. 2949-2951 ◽  
Author(s):  
G. Carapella ◽  
N. Martucciello ◽  
G. Costabile ◽  
C. Ferdeghini ◽  
V. Ferrando ◽  
...  
Keyword(s):  
Thin Film ◽  
Josephson Effect ◽  
Large Area

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Vacuum processed large area doped thin-film crystals: A new approach for high-performance organic electronics

2021 ◽  
Vol 17 ◽  
pp. 100352
Author(s):  
S.-J. Wang ◽  
M. Sawatzki ◽  
H. Kleemann ◽  
I. Lashkov ◽  
D. Wolf ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
High Performance ◽  
Large Area ◽  
New Approach

Advanced large area characterization of thin-film solar modules by electroluminescence and thermography imaging techniques

2015 ◽  
Vol 135 ◽  
pp. 35-42 ◽  
Author(s):  
A. Gerber ◽  
V. Huhn ◽  
T.M.H. Tran ◽  
M. Siegloch ◽  
Y. Augarten ◽  
...  
Keyword(s):  
Thin Film ◽  
Imaging Techniques ◽  
Large Area

Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes

1995 ◽  
Vol 377 ◽  
Author(s):  
R. Martins ◽  
G. Lavareda ◽  
F. Soares ◽  
E. Fortunato
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Steady State ◽  
Detection Limit ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Studies of key technologies for large area CdTe thin film solar cells

2007 ◽  
Vol 515 (15) ◽  
pp. 5792-5797 ◽  
Author(s):  
Lianghuan Feng ◽  
Lili Wu ◽  
Zhi Lei ◽  
Wei Li ◽  
Yaping Cai ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Large Area ◽  
Key Technologies
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