Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

2002 ◽  
Vol 80 (17) ◽  
pp. 3099-3101 ◽  
Author(s):  
M. E. Aumer ◽  
S. F. LeBoeuf ◽  
B. F. Moody ◽  
S. M. Bedair ◽  
K. Nam ◽  
...  
Keyword(s):  
Quantum Well ◽  
Localized States ◽  
Quantum Well Structures

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

scholarly journals Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

2002 ◽  
Vol 92 (8) ◽  
pp. 4441-4448 ◽  
Author(s):  
Shih-Wei Feng ◽  
Yung-Chen Cheng ◽  
Yi-Yin Chung ◽  
C. C. Yang ◽  
Yen-Sheng Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Localized States ◽  
Quantum Well Structures ◽  
Recombination Dynamics

scholarly journals Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1999 ◽  
Vol 4 (S1) ◽  
pp. 112-117 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Excitonic Enhanced Optical Gain Of GaN/AlGaN Quantum Wells With Localized States

1997 ◽  
Vol 482 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Wells ◽  
Carrier Density ◽  
Optical Gain ◽  
Localized States ◽  
Many Body ◽  
Quantum Well Structures ◽  
The Many ◽  
Temperature Green’S Function

AbstractWe have evaluated the optical gain of GaN/AlGaN quantum well structures with localized states, taking into account the Coulomb interaction. The localized states axe introduced in the well as quantum dot-like subband states. We have used the temperature Green's function formalism to treat the many-body effects and have found a new excitonic enhancement of the optical gain involved the localized states. This enhancement is stronger than the conventional Coulomb enhancement. It might play an important role to reduce the threshold carrier density.

Equidistant spectrum of localized states due to fluctuations of the parameters in quantum-well structures

JETP Letters ◽  
1996 ◽  
Vol 63 (4) ◽  
pp. 278-284 ◽  
Author(s):  
Yu. A. Aleshchenko ◽  
V. V. Kapaev ◽  
Yu. V. Kopaev ◽  
N. N. Mel’nik
Keyword(s):  
Quantum Well ◽  
Localized States ◽  
Quantum Well Structures ◽  
Equidistant Spectrum

Optical nutation in GaAs Ga Al As quantum well structures

1996 ◽  
Vol 43 (8) ◽  
pp. 1657-1669 ◽  
Author(s):  
SHARMILA BANERJEE and PRANAY K SEN
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures
Sign in / Sign up

Export Citation Format

Share Document