Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO3/Pt thin-film capacitors

2002 ◽  
Vol 80 (14) ◽  
pp. 2538-2540 ◽  
Author(s):  
Mingrong Shen ◽  
Zhenggao Dong ◽  
Zhaoqiang Gan ◽  
Shuibing Ge ◽  
Wenwu Cao
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Thin Film Capacitors ◽  
Leakage Characteristics

Low Temperature Hydrogen Induced Degradation of (Ba,Sr)TiO3 Thin Film Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
J. D. Baniecki ◽  
C. Parks ◽  
R. B. Laibowitz ◽  
T. M. Shaw ◽  
J. Lian ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Bottom Electrode ◽  
Electrical Characterization ◽  
Asymmetric Distribution ◽  
Leakage Currents ◽  
Metal Electrodes ◽  
Thin Film Capacitors ◽  
Electrode Interface ◽  
Secondary Ion

AbstractWe have used electrical characterization and secondary ion mass spectroscopy (SIMS) to investigate the influence of hydrogen or deuterium (H/D) on the degradation of the electrical properties of metal/Ba0.7Sr0.3TiO3/metal (M/BSTO/M) thin film capacitors after forming gas annealing (FGA). Leakage and dielectric relaxation currents increase after FGA at temperatures as low as 23C. SIMS profiling shows that at 23C H/D diffuses through thin film metal electrodes and accumulates at electrode interfaces. The location (top or bottom electrode interface) of H/D accumulation is dependent on the type of electrodes and capacitor structure. The resulting asymmetric distribution of H/D leads to large voltage offsets in the C-V characteristic, asymmetric leakage currents, and increased dielectric relaxation currents. Possible mechanisms for increased leakage and relaxation currents after FGA are discussed.

Low-frequency dielectric relaxation of BaTiO3 thin-film capacitors

1999 ◽  
Vol 75 (12) ◽  
pp. 1784-1786 ◽  
Author(s):  
Su-Jae Lee ◽  
Kwang-Yong Kang ◽  
Seok-Kil Han
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Low Frequency ◽  
Thin Film Capacitors ◽  
Batio3 Thin Film
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