Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots

2002 ◽  
Vol 80 (14) ◽  
pp. 2490-2492 ◽  
Author(s):  
Zhonghui Chen ◽  
Eui-Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Quantum Dots ◽  
Normal Incidence ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Self Assembled ◽  
Long Wavelength Infrared

Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots

2013 ◽  
Vol 59 ◽  
pp. 89-92 ◽  
Author(s):  
O. Gustafsson ◽  
A. Karim ◽  
Q. Wang ◽  
J. Berggren ◽  
C. Asplund ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Normal Incidence Intersubband Transitions in InGaAs/GaAs Quantum Dots With Non-monotonic Shift

2003 ◽  
Vol 776 ◽  
Author(s):  
M. L. Hussein ◽  
W. Q. Ma ◽  
G.J. Salamo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Normal Incidence ◽  
Peak Shift ◽  
Infrared Region ◽  
Optical Absorption Coefficient ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Absorbance Peak ◽  
Long Wavelength Infrared

AbstractMultiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under normal incidence. The absorbance peak shift with dot size was investigated and revealed non-monotonic behavior of intersubband transitions. The optical absorption coefficient was calculated to be in order of 3.8×103 cm-2.

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications

ETRI Journal ◽  
2004 ◽  
Vol 26 (5) ◽  
pp. 475-480 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Ho-Sang Kwack ◽  
Chul Wook Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Laser Applications ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Self Assembled

Quantum Dot Long-Wavelength Detectors

2001 ◽  
Vol 692 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Adrienne D. Stiff-Roberts ◽  
Sanjay Krishna ◽  
Steve Kennerly
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Elevated Temperatures ◽  
Infrared Imaging ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Dark Currents ◽  
Long Wavelength Infrared

AbstractLong-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better hightemperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

A Long-Wavelength Infrared Photodetector with Self-Organized InAs Quantum Dots Embedded on HEMT-Like Structure

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2442-2444 ◽  
Author(s):  
Taehee Cho ◽  
Jong-Wook Kim ◽  
Jae-Eung Oh ◽  
Jeong-Woo Choe ◽  
Songcheol Hong
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Self Organized ◽  
Long Wavelength Infrared

Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001)

2004 ◽  
Vol 85 (6) ◽  
pp. 1033-1035 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Self Assembled

Normal incidence infrared photoconductor of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures

2001 ◽  
Vol 227-228 ◽  
pp. 1162-1165 ◽  
Author(s):  
M.D Kim ◽  
A.G Choo ◽  
T.I Kim ◽  
S.S Ko ◽  
D.H Baek ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Normal Incidence ◽  
Inas Quantum Dots ◽  
Self Assembled

Magnetotunneling spectroscopy imaging of electron wave functions in self-assembled InAs quantum dots

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wave Functions ◽  
Electron Wave ◽  
Inas Quantum Dots ◽  
Self Assembled
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