Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

2002 ◽  
Vol 80 (13) ◽  
pp. 2275-2277 ◽  
Author(s):  
M. Benyoucef ◽  
M. Kuball ◽  
B. Beaumont ◽  
P. Gibart
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Silicon Substrates ◽  
Raman Mapping ◽  
Element Analysis

scholarly journals Method of Calculating the Inductance Value of MEMS Suspended Inductors with Silicon Substrates

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 604 ◽  
Author(s):  
Yiyuan Li ◽  
Jianhua Li ◽  
Lixin Xu
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Basic Component ◽  
Silicon Substrates ◽  
Element Analysis ◽  
Microelectromechanical System ◽  
Single Turn ◽  
Inductor Coil ◽  
Calculation Results ◽  
Rf Performance

Microelectromechanical system (MEMS) suspended inductors have excellent radio-frequency (RF) performance. The inductance value is one of the main features that characterizes the performance of inductors. It is important to consider the influence of the substrate and the suspension height in calculating the inductance value accurately. In this paper, a method is proposed to calculate the inductance value of the MEMS suspended inductor wire with a silicon substrate, as the wire is the basic component of the inductor coil. Then the method is extended to the suspended inductors consisting of a single turn coil. The calculation results obtained by this proposed method were verified by finite-element analysis (HFSS) and they were found to agree well with the results of the HFSS simulation.

Finite element analysis on dental implant[ndash ]supported prostheses without passive fit

2002 ◽  
Vol 11 (1) ◽  
pp. 30-40 ◽  
Author(s):  
Chatchai Kunavisarut ◽  
Lisa A. Lang ◽  
Brian R. Stoner ◽  
David A. Felton
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Dental Implant ◽  
Element Analysis ◽  
Passive Fit

Performance enhancement of normal contact ratio gearing system through correction factor

2019 ◽  
Vol 13 (3) ◽  
pp. 5242-5258
Author(s):  
R. Ravivarman ◽  
K. Palaniradja ◽  
R. Prabhu Sekar
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Correction Factor ◽  
Bending Strength ◽  
Performance Enhancement ◽  
Transmission Ratio ◽  
Contact Ratio ◽  
Element Analysis ◽  
Normal Contact ◽  
Root Region

As lined, higher transmission ratio drives system will have uneven stresses in the root region of the pinion and wheel. To enrich this agility of uneven stresses in normal-contact ratio (NCR) gearing system, an enhanced system is desirable to be industrialized. To attain this objective, it is proposed to put on the idea of modifying the correction factor in such a manner that the bending strength of the gearing system is improved. In this work, the correction factor is modified in such a way that the stress in the root region is equalized between the pinion and wheel. This equalization of stresses is carried out by providing a correction factor in three circumstances: in pinion; wheel and both the pinion and the wheel. Henceforth performances of this S+, S0 and S- drives are evaluated in finite element analysis (FEA) and compared for balanced root stresses in parallel shaft spur gearing systems. It is seen that the outcomes gained from the modified drive have enhanced performance than the standard drive.

Sign in / Sign up

Export Citation Format

Share Document