High-yield synthesis and one-dimensional structure of C60 encapsulated in single-wall carbon nanotubes

2002 ◽  
Vol 91 (11) ◽  
pp. 9333-9340 ◽  
Author(s):  
Brian W. Smith ◽  
Richard M. Russo ◽  
Satishkumar B. Chikkannanavar ◽  
David E. Luzzi
2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Daisuke Ogawa ◽  
Ryo Kitaura ◽  
Takeshi Saito ◽  
Shinobu Aoyagi ◽  
Eiji Nishibori ◽  
...  

Thermally fragile tris(η5-cyclopentadienyl)erbium (ErCp3) molecules are encapsulated in single-wall carbon nanotubes (SWCNTs) with high yield. We realized the encapsulation of ErCp3with high filling ratio by using high quality SWCNTs at an optimized temperature under higher vacuum. Structure determination based on high-resolution transmission electron microscope observations together with the image simulations reveals the presence of almost free rotation of each ErCp3molecule in SWCNTs. The encapsulation is also confirmed by X-ray diffraction. Trivalent character of Er ions (i.e., Er3+) is confirmed by X-ray absorption spectrum.


2001 ◽  
Vol 121 (1-3) ◽  
pp. 1195-1196 ◽  
Author(s):  
H. Kataura ◽  
Y. Maniwa ◽  
T. Kodama ◽  
K. Kikuchi ◽  
K. Hirahara ◽  
...  

2018 ◽  
Vol 57 (36) ◽  
pp. 11649-11653 ◽  
Author(s):  
Martin Hart ◽  
Ji Chen ◽  
Angelos Michaelides ◽  
Andrea Sella ◽  
Milo S. P. Shaffer ◽  
...  

2003 ◽  
Vol 772 ◽  
Author(s):  
Emmanuel Valentin ◽  
Stephane Auvray ◽  
Arianna Filoramo ◽  
Aline Ribayrol ◽  
Marcelo Goffman ◽  
...  

AbstractWe describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices.


2013 ◽  
Vol 5 (11) ◽  
pp. 5324-5329 ◽  
Author(s):  
Ignacio Martín-Fabiani ◽  
Mari-Cruz García-Gutiérrez ◽  
Daniel R. Rueda ◽  
Amelia Linares ◽  
Jaime J. Hernández ◽  
...  

2006 ◽  
Vol 6 (5) ◽  
pp. 1482-1485 ◽  
Author(s):  
Yuliang Mao ◽  
Jianxin Zhong ◽  
Jianmei Yuan ◽  
Xinluo Zhao ◽  
Yoshinori Ando

2010 ◽  
Vol 55 (3) ◽  
pp. 507-512 ◽  
Author(s):  
R. M. Zakalyukin ◽  
L. N. Demyanets ◽  
N. A. Kiselev ◽  
A. S. Kumskov ◽  
M. B. Kislov ◽  
...  

2003 ◽  
Vol 372 (1-2) ◽  
pp. 45-50 ◽  
Author(s):  
Daisuke Nishide ◽  
H Kataura ◽  
S Suzuki ◽  
K Tsukagoshi ◽  
Y Aoyagi ◽  
...  

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